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Antimony and boron diffusion in SiGe and Si under the influence of injected point defects

Antimony and boron diffusion in SiGe and Si under the influence of injected point defects
Antimony and boron diffusion in SiGe and Si under the influence of injected point defects
The diffusion of Sb and B in both Si and SiGe is studied in this work. Injection of both interstitial- and vacancy-type point defects using rapid thermal annealing (RTA) in both NH3 and O2 atmospheres is calibrated for Sb diffusion in Si, before examining Sb diffusion in SiGe and B diffusion in Si and SiGe. Measurement of the diffusion retardation or enhancement under defect injection conditions will elucidate the diffusion mechanism and allow determination of the diffusivity, necessary for modeling of device fabrication processes. These experiments confirm the predominant mechanism for diffusion of Sb in Si and SiGe to be vacancy-mediated, while the predominant mechanism for B appears to be interstitial-mediated in Si and SiGe. The diffusivity values measured for B in Si and SiGe are reported.
219-221
Bonar, J.M.
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Willoughby, A.F.W.
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Dan, A.H.
a58c0d13-820d-4d22-b39a-b6608d97adf0
McGregor, B.M.
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Lerch, W.
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Loffelmacher, D.
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Cooke, G.A.
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Dowsett, M.G.
2cbc9d73-9e58-47a1-9e96-df86024272fa
Bonar, J.M.
12d01a95-92f9-4aa1-bce0-c857451cbbfe
Willoughby, A.F.W.
5176a13b-d691-4447-85a6-fdc681118819
Dan, A.H.
a58c0d13-820d-4d22-b39a-b6608d97adf0
McGregor, B.M.
3a43796c-d175-41d7-a8d2-1f2d270a2150
Lerch, W.
32b05049-dd28-4879-910a-99e5f9aa75c1
Loffelmacher, D.
06c74cf3-5707-4bd7-bc9d-aecc1b13b0a2
Cooke, G.A.
7ef6df7b-49f6-45fe-96a9-ab3b23a80eab
Dowsett, M.G.
2cbc9d73-9e58-47a1-9e96-df86024272fa

Bonar, J.M., Willoughby, A.F.W., Dan, A.H., McGregor, B.M., Lerch, W., Loffelmacher, D., Cooke, G.A. and Dowsett, M.G. (2001) Antimony and boron diffusion in SiGe and Si under the influence of injected point defects. Journal of Materials Science: Materials in Electronics, 12 (4-6), 219-221. (doi:10.1023/A:1011299017835).

Record type: Article

Abstract

The diffusion of Sb and B in both Si and SiGe is studied in this work. Injection of both interstitial- and vacancy-type point defects using rapid thermal annealing (RTA) in both NH3 and O2 atmospheres is calibrated for Sb diffusion in Si, before examining Sb diffusion in SiGe and B diffusion in Si and SiGe. Measurement of the diffusion retardation or enhancement under defect injection conditions will elucidate the diffusion mechanism and allow determination of the diffusivity, necessary for modeling of device fabrication processes. These experiments confirm the predominant mechanism for diffusion of Sb in Si and SiGe to be vacancy-mediated, while the predominant mechanism for B appears to be interstitial-mediated in Si and SiGe. The diffusivity values measured for B in Si and SiGe are reported.

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Published date: 2001

Identifiers

Local EPrints ID: 21790
URI: https://eprints.soton.ac.uk/id/eprint/21790
PURE UUID: f46d8225-58da-4507-9682-b4a411933d51

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Date deposited: 14 Mar 2006
Last modified: 15 Jul 2019 19:23

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Contributors

Author: J.M. Bonar
Author: A.F.W. Willoughby
Author: A.H. Dan
Author: B.M. McGregor
Author: W. Lerch
Author: D. Loffelmacher
Author: G.A. Cooke
Author: M.G. Dowsett

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