Furnace and RTA injection of point defects into CVD grown B-doped Si and SiGe


Bonar, J.M., McGregor, B.M., Cowern, N.E.B., Dan, A.H., Cooke, G.A. and Willoughby, A.F.W. (2001) Furnace and RTA injection of point defects into CVD grown B-doped Si and SiGe In Materials Research Society Symposium Proceedings. Materials Research Socciety. 6 pp, B4.9.1-B4.9.6.

Download

Full text not available from this repository.

Description/Abstract

The diffusion of B in Si and SiGe under the influence of point defect injection by Rapid Thermal Anneal (RTA) and conventional anneal is studied in this work.

Item Type: Conference or Workshop Item (Paper)
Additional Information: Symposium B
Related URLs:
Subjects:
ePrint ID: 21791
Date :
Date Event
2001Published
Date Deposited: 30 Mar 2006
Last Modified: 16 Apr 2017 22:54
Further Information:Google Scholar
URI: http://eprints.soton.ac.uk/id/eprint/21791

Actions (login required)

View Item View Item