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Furnace and RTA injection of point defects into CVD grown B-doped Si and SiGe

Furnace and RTA injection of point defects into CVD grown B-doped Si and SiGe
Furnace and RTA injection of point defects into CVD grown B-doped Si and SiGe
The diffusion of B in Si and SiGe under the influence of point defect injection by Rapid Thermal Anneal (RTA) and conventional anneal is studied in this work.
B4.9.1-B4.9.6
Materials Research Society
Bonar, J.M.
12d01a95-92f9-4aa1-bce0-c857451cbbfe
McGregor, B.M.
3a43796c-d175-41d7-a8d2-1f2d270a2150
Cowern, N.E.B.
d5f2073f-03d8-42bc-bf2d-e9024c7b15bf
Dan, A.H.
a58c0d13-820d-4d22-b39a-b6608d97adf0
Cooke, G.A.
7ef6df7b-49f6-45fe-96a9-ab3b23a80eab
Willoughby, A.F.W.
5176a13b-d691-4447-85a6-fdc681118819
Bonar, J.M.
12d01a95-92f9-4aa1-bce0-c857451cbbfe
McGregor, B.M.
3a43796c-d175-41d7-a8d2-1f2d270a2150
Cowern, N.E.B.
d5f2073f-03d8-42bc-bf2d-e9024c7b15bf
Dan, A.H.
a58c0d13-820d-4d22-b39a-b6608d97adf0
Cooke, G.A.
7ef6df7b-49f6-45fe-96a9-ab3b23a80eab
Willoughby, A.F.W.
5176a13b-d691-4447-85a6-fdc681118819

Bonar, J.M., McGregor, B.M., Cowern, N.E.B., Dan, A.H., Cooke, G.A. and Willoughby, A.F.W. (2001) Furnace and RTA injection of point defects into CVD grown B-doped Si and SiGe. In Materials Research Society Symposium Proceedings. Materials Research Society. B4.9.1-B4.9.6 .

Record type: Conference or Workshop Item (Paper)

Abstract

The diffusion of B in Si and SiGe under the influence of point defect injection by Rapid Thermal Anneal (RTA) and conventional anneal is studied in this work.

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More information

Published date: 2001
Additional Information: Symposium B

Identifiers

Local EPrints ID: 21791
URI: http://eprints.soton.ac.uk/id/eprint/21791
PURE UUID: 6fe446a7-9288-46b1-8404-08791ce7c93b

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Date deposited: 30 Mar 2006
Last modified: 09 Apr 2024 09:43

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Contributors

Author: J.M. Bonar
Author: B.M. McGregor
Author: N.E.B. Cowern
Author: A.H. Dan
Author: G.A. Cooke
Author: A.F.W. Willoughby

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