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Furnace and RTA injection of point defects into CVD grown B-doped Si and SiGe

Bonar, J.M., McGregor, B.M., Cowern, N.E.B., Dan, A.H., Cooke, G.A. and Willoughby, A.F.W. (2001) Furnace and RTA injection of point defects into CVD grown B-doped Si and SiGe In Materials Research Society Symposium Proceedings. Materials Research Socciety. 6 pp, B4.9.1-B4.9.6.

Record type: Conference or Workshop Item (Paper)

Abstract

The diffusion of B in Si and SiGe under the influence of point defect injection by Rapid Thermal Anneal (RTA) and conventional anneal is studied in this work.

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More information

Published date: 2001
Additional Information: Symposium B

Identifiers

Local EPrints ID: 21791
URI: http://eprints.soton.ac.uk/id/eprint/21791
PURE UUID: 6fe446a7-9288-46b1-8404-08791ce7c93b

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Date deposited: 30 Mar 2006
Last modified: 17 Jul 2017 16:25

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Contributors

Author: J.M. Bonar
Author: B.M. McGregor
Author: N.E.B. Cowern
Author: A.H. Dan
Author: G.A. Cooke
Author: A.F.W. Willoughby

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