Uppal, Suresh and Willoughby, Arthur F.W.
Diffusion of boron in germanium
At Proceedings of the Seventh Postgraduate Conference in Engineering Materials,.
01 Oct 2001.
Full text not available from this repository.
Results are presented of implantation and diffusion
study of boron (B) in germanium (Ge). B implantation
was carried out in Ge with differrent energies and to different
doses. High-resolution secondary ion mass spectroscopy
(SIMS) was used to obtain concentration profiles after furnace
annealing. The as-implanted profiles show a long tail possibly
due to enhanced diffusion. A limited diffusion has been observed
after furnace annealing. Using T-SUPREM, diffusivity
value of 1.5 (:J:0: .3) X 10-16 cm2/s at 850°C has been extracted.
This value is two orders of magnitude lower than previously
reported values. The results question the change in diffusion
mechanism of B diffusion in SiGe alloys from low Ge leveIs to
high Ge leveIs.
Conference or Workshop Item
|Venue - Dates:
||Proceedings of the Seventh Postgraduate Conference in Engineering Materials,, 2001-10-01 - 2001-10-01
||boron, germanium, diffusion, sims
||19 Mar 2007
||16 Apr 2017 22:54
|Further Information:||Google Scholar|
Actions (login required)