Diffusion of boron in germanium

Uppal, Suresh and Willoughby, Arthur F.W. (2001) Diffusion of boron in germanium At Proceedings of the Seventh Postgraduate Conference in Engineering Materials,. 01 Oct 2001. , pp. 19-20.


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Results are presented of implantation and diffusion study of boron (B) in germanium (Ge). B implantation was carried out in Ge with differrent energies and to different doses. High-resolution secondary ion mass spectroscopy (SIMS) was used to obtain concentration profiles after furnace annealing. The as-implanted profiles show a long tail possibly due to enhanced diffusion. A limited diffusion has been observed after furnace annealing. Using T-SUPREM, diffusivity value of 1.5 (:J:0: .3) X 10-16 cm2/s at 850°C has been extracted. This value is two orders of magnitude lower than previously reported values. The results question the change in diffusion mechanism of B diffusion in SiGe alloys from low Ge leveIs to high Ge leveIs.

Item Type: Conference or Workshop Item (Paper)
Venue - Dates: Proceedings of the Seventh Postgraduate Conference in Engineering Materials,, 2001-10-01 - 2001-10-01
Keywords: boron, germanium, diffusion, sims
ePrint ID: 21793
Date :
Date Event
Date Deposited: 19 Mar 2007
Last Modified: 16 Apr 2017 22:54
Further Information:Google Scholar
URI: http://eprints.soton.ac.uk/id/eprint/21793

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