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Ion-implantation and diffusion behaviour of boron in germanium

Record type: Article

Results are presented of implantation and diffusion study of boron (B) in germanium (Ge). B implantation was carried out in Ge with different energies and to different doses. High-resolution secondary ion mass spectroscopy was used to obtain concentration profiles after furnace annealing. The as-implanted profiles show a long tail possibly due to enhanced diffusion. A limited diffusion has been observed after furnace annealing. Using T-SUPREM, diffusivity value of 1.5(±0.3)×10?16 cm2/s at 850°C has been extracted. This value is two orders of magnitude lower than previously reported values. The results question the change in diffusion mechanism of B diffusion in Si–Ge alloys from low Ge levels to high Ge levels.

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Citation

Uppal, Suresh, Willoughby, A.F.W., Bonar, Janet M., Evans, Alan G.R., Cowern, Nick E.B., Morris, Richard and Dowsett, Mark G. (2001) Ion-implantation and diffusion behaviour of boron in germanium Physica B: Condensed Matter, 308-310, pp. 525-528. (doi:10.1016/S0921-4526(01)00752-9).

More information

Published date: 2001
Keywords: germanium, boron, ion implantation, diffusion

Identifiers

Local EPrints ID: 21959
URI: http://eprints.soton.ac.uk/id/eprint/21959
ISSN: 0921-4526
PURE UUID: 9d59b698-ba48-47c3-b8ec-e7a8bb8f8b0c

Catalogue record

Date deposited: 20 Mar 2006
Last modified: 17 Jul 2017 16:24

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Contributors

Author: Suresh Uppal
Author: A.F.W. Willoughby
Author: Janet M. Bonar
Author: Alan G.R. Evans
Author: Nick E.B. Cowern
Author: Richard Morris
Author: Mark G. Dowsett

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