Thermal mechanical behavior of thick PECVD for oxide films power MEMS applications
Thermal mechanical behavior of thick PECVD for oxide films power MEMS applications
This paper presents residual stress characterization and fracture analysis of thick plasma-enhanced chemical vapor deposition (PECVD) oxide films. The motivation for this work is to elucidate the factors contributing to residual stress, deformation and fracture of silicon oxide films so as to refine the microfabrication process for power microelectromechanical systems (MEMS) manufacturing. The stress–temperature behavior of PECVD oxide films during annealing was studied. Analyses of residual stress relaxation, intrinsic stress generation, and the large deformation response of wafers were carried out. Preliminary experimental observations and estimates of oxide fracture were also provided.
oxide MEMS, intrinsic stress, stress relaxation
263-270
Zhang, Xin
3056a795-80f7-4bbd-9c75-ecbc93085421
Chen, Kuo-Shen
948bab7a-ad0b-4d67-bdda-a8b1f5bcaae2
Spearing, S.Mark
9e56a7b3-e0e8-47b1-a6b4-db676ed3c17a
2003
Zhang, Xin
3056a795-80f7-4bbd-9c75-ecbc93085421
Chen, Kuo-Shen
948bab7a-ad0b-4d67-bdda-a8b1f5bcaae2
Spearing, S.Mark
9e56a7b3-e0e8-47b1-a6b4-db676ed3c17a
Zhang, Xin, Chen, Kuo-Shen and Spearing, S.Mark
(2003)
Thermal mechanical behavior of thick PECVD for oxide films power MEMS applications.
Sensors and Actuators A: Physical, 103 (1-2), .
(doi:10.1016/S0924-4247(02)00343-6).
Abstract
This paper presents residual stress characterization and fracture analysis of thick plasma-enhanced chemical vapor deposition (PECVD) oxide films. The motivation for this work is to elucidate the factors contributing to residual stress, deformation and fracture of silicon oxide films so as to refine the microfabrication process for power microelectromechanical systems (MEMS) manufacturing. The stress–temperature behavior of PECVD oxide films during annealing was studied. Analyses of residual stress relaxation, intrinsic stress generation, and the large deformation response of wafers were carried out. Preliminary experimental observations and estimates of oxide fracture were also provided.
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Published date: 2003
Keywords:
oxide MEMS, intrinsic stress, stress relaxation
Identifiers
Local EPrints ID: 22831
URI: http://eprints.soton.ac.uk/id/eprint/22831
ISSN: 0924-4247
PURE UUID: e5b31d31-6615-411f-acf6-f9931902e45f
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Date deposited: 10 Mar 2006
Last modified: 16 Mar 2024 03:37
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Author:
Xin Zhang
Author:
Kuo-Shen Chen
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