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Characterization of silicon wafer bonding for power MEMS applications

Characterization of silicon wafer bonding for power MEMS applications
Characterization of silicon wafer bonding for power MEMS applications
This paper reports the investigation of low-temperature silicon wafer fusion bonding for MEMS applications. A bonding process utilizing annealing temperatures between 400 and 1100 °C was characterized. The silicon–silicon bonded interface was analyzed by infrared transmission (IT) and transmission electron microscopy (TEM) and the bond toughness was quantified by a four-point bending–delamination technique.
low temperature, wafer bonding, power MEMS
0924-4247
1-8
Ayón, Arturo A.
1cfe60a6-1376-462b-bed9-14a602eec51b
Zhang, Xin
788d80a9-6117-4670-81ef-f8ef2d26d30c
Turner, Kevin T.
aebd795a-61ba-40c4-a2db-f3548f39557a
Choi, Dongwon
f6ecd2d1-4cc0-4032-af72-5a02a1155e18
Miller, Bruno
264405fd-8d53-4c6e-8f6d-438e25d6126b
Nagle, Steven F.
86017412-cd7e-498d-ac7e-ee6e669293d0
Spearing, S. Mark
9e56a7b3-e0e8-47b1-a6b4-db676ed3c17a
Ayón, Arturo A.
1cfe60a6-1376-462b-bed9-14a602eec51b
Zhang, Xin
788d80a9-6117-4670-81ef-f8ef2d26d30c
Turner, Kevin T.
aebd795a-61ba-40c4-a2db-f3548f39557a
Choi, Dongwon
f6ecd2d1-4cc0-4032-af72-5a02a1155e18
Miller, Bruno
264405fd-8d53-4c6e-8f6d-438e25d6126b
Nagle, Steven F.
86017412-cd7e-498d-ac7e-ee6e669293d0
Spearing, S. Mark
9e56a7b3-e0e8-47b1-a6b4-db676ed3c17a

Ayón, Arturo A., Zhang, Xin, Turner, Kevin T., Choi, Dongwon, Miller, Bruno, Nagle, Steven F. and Spearing, S. Mark (2003) Characterization of silicon wafer bonding for power MEMS applications. Sensors and Actuators A: Physical, 103 (1-2), 1-8. (doi:10.1016/S0924-4247(02)00329-1).

Record type: Article

Abstract

This paper reports the investigation of low-temperature silicon wafer fusion bonding for MEMS applications. A bonding process utilizing annealing temperatures between 400 and 1100 °C was characterized. The silicon–silicon bonded interface was analyzed by infrared transmission (IT) and transmission electron microscopy (TEM) and the bond toughness was quantified by a four-point bending–delamination technique.

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More information

Published date: 2003
Keywords: low temperature, wafer bonding, power MEMS
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Identifiers

Local EPrints ID: 22833
URI: http://eprints.soton.ac.uk/id/eprint/22833
DOI: doi:10.1016/S0924-4247(02)00329-1
ISSN: 0924-4247
PURE UUID: 2735d7a3-b52b-418a-9f13-e52e87485dc1
ORCID for S. Mark Spearing: ORCID iD orcid.org/0000-0002-3059-2014

Catalogue record

Date deposited: 10 Mar 2006
Last modified: 16 Mar 2024 03:37

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Contributors

Author: Arturo A. Ayón
Author: Xin Zhang
Author: Kevin T. Turner
Author: Dongwon Choi
Author: Bruno Miller
Author: Steven F. Nagle
Author: S. Mark Spearing ORCID iD

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