On the flexural creep of single crystal silicon
On the flexural creep of single crystal silicon
silicon, creep, high temperature, shear bands, thermally activated processes
769-774
Walters, D.S.
cd3c0a15-4b0c-4524-b10d-8bf623786103
Spearing, S.M.
6f3cf4a3-9478-4d68-a868-1f8ea2013dd1
2000
Walters, D.S.
cd3c0a15-4b0c-4524-b10d-8bf623786103
Spearing, S.M.
6f3cf4a3-9478-4d68-a868-1f8ea2013dd1
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Published date: 2000
Keywords:
silicon, creep, high temperature, shear bands, thermally activated processes
Identifiers
Local EPrints ID: 23088
URI: http://eprints.soton.ac.uk/id/eprint/23088
ISSN: 1359-6462
PURE UUID: a4911ea7-c9dd-45db-96a2-93c088d554f5
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Date deposited: 24 Mar 2006
Last modified: 15 Mar 2024 06:43
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Author:
D.S. Walters
Author:
S.M. Spearing
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