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Residual stress in thick low-pressure chemical-vapor deposited polycrystalline SiC coatings on Si substrates

Residual stress in thick low-pressure chemical-vapor deposited polycrystalline SiC coatings on Si substrates
Residual stress in thick low-pressure chemical-vapor deposited polycrystalline SiC coatings on Si substrates
Residual stress in thick coatings of polycrystalline chemical-vapor deposited SiC on Si substrates is a key variable that must be controlled if SiC is to be used in microelectromechanical systems. Studies have been conducted to characterize the residual stress level as a function of deposition temperature, Si wafer and SiC coating thickness, and the ratios of methyltrichlorosilane to hydrogen and hydrogen chloride. Wafer curvature was used to monitor residual stress in combination with a laminated plate analysis. Compressive intrinsic (growth) stresses were measured with magnitudes in the range of 200–300 MPa; however, these can be balanced with the tensile stress due to the thermal-expansion mismatch to leave near-zero stress at room temperature. The magnitude of the compressive intrinsic stress is consistent with previously reported values of surface stress in combination with the competition between grain-boundary energy and elastic strain energy
0021-8979
Choi, D.
9fb96eda-84e2-4cdb-9091-a9e28bd93865
Shinavski, R.J.
c9b82363-aa1b-47b4-9284-f9e029c3954e
Steffier, W.S.
9fa3c198-12cb-4937-a91c-dea2558f644b
Spearing, S.M.
9e56a7b3-e0e8-47b1-a6b4-db676ed3c17a
Choi, D.
9fb96eda-84e2-4cdb-9091-a9e28bd93865
Shinavski, R.J.
c9b82363-aa1b-47b4-9284-f9e029c3954e
Steffier, W.S.
9fa3c198-12cb-4937-a91c-dea2558f644b
Spearing, S.M.
9e56a7b3-e0e8-47b1-a6b4-db676ed3c17a

Choi, D., Shinavski, R.J., Steffier, W.S. and Spearing, S.M. (2005) Residual stress in thick low-pressure chemical-vapor deposited polycrystalline SiC coatings on Si substrates. Journal of Applied Physics, 97 (7). (doi:10.1063/1.1866495).

Record type: Article

Abstract

Residual stress in thick coatings of polycrystalline chemical-vapor deposited SiC on Si substrates is a key variable that must be controlled if SiC is to be used in microelectromechanical systems. Studies have been conducted to characterize the residual stress level as a function of deposition temperature, Si wafer and SiC coating thickness, and the ratios of methyltrichlorosilane to hydrogen and hydrogen chloride. Wafer curvature was used to monitor residual stress in combination with a laminated plate analysis. Compressive intrinsic (growth) stresses were measured with magnitudes in the range of 200–300 MPa; however, these can be balanced with the tensile stress due to the thermal-expansion mismatch to leave near-zero stress at room temperature. The magnitude of the compressive intrinsic stress is consistent with previously reported values of surface stress in combination with the competition between grain-boundary energy and elastic strain energy

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Published date: 2005
Additional Information: Article No. 074904

Identifiers

Local EPrints ID: 23284
URI: http://eprints.soton.ac.uk/id/eprint/23284
ISSN: 0021-8979
PURE UUID: f5f1b1fc-cf8f-4848-842e-ca52ad06d3cd
ORCID for S.M. Spearing: ORCID iD orcid.org/0000-0002-3059-2014

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Date deposited: 13 Mar 2006
Last modified: 20 Jul 2019 00:59

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Contributors

Author: D. Choi
Author: R.J. Shinavski
Author: W.S. Steffier
Author: S.M. Spearing ORCID iD

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