Dry etching of SiC in inductively coupled Cl2/Ar plasma
Dry etching of SiC in inductively coupled Cl2/Ar plasma
Inductively coupled Cl2/Ar plasma etching of 4H–SiC has been studied. The SiC etch rate has been investigated as a function of average ion energy, Ar concentration in the gas mixtures, inductively coupled plasma power, work pressure and substrate temperature. The etch mechanism has been investigated by correlating the ion current density and relative atomic chlorine content to the etch rate under various etch conditions. For the first time, it has been found that the etch rate of SiC increases by about 50% at lower substrate temperatures (-80°C) than at high substrate temperatures (150°C) with the highest SiC etch rate of 230 nm min^-1 being achieved at a substrate temperature of -80°C.
1809-1814
Jiang, Liudi
374f2414-51f0-418f-a316-e7db0d6dc4d1
Plank, N.O.V.
b4b5fc7f-6622-4a69-aff6-714ed6ee3155
Blaw, M.A.
537605ae-2997-4c3b-9c4a-03d89b69a2ee
Cheung, R.
45525b9d-cadc-486b-be31-ffc764a9b93e
van der Drift, E.
a6deec04-752e-4b73-9d50-4e1e8afc6e6e
2004
Jiang, Liudi
374f2414-51f0-418f-a316-e7db0d6dc4d1
Plank, N.O.V.
b4b5fc7f-6622-4a69-aff6-714ed6ee3155
Blaw, M.A.
537605ae-2997-4c3b-9c4a-03d89b69a2ee
Cheung, R.
45525b9d-cadc-486b-be31-ffc764a9b93e
van der Drift, E.
a6deec04-752e-4b73-9d50-4e1e8afc6e6e
Jiang, Liudi, Plank, N.O.V., Blaw, M.A., Cheung, R. and van der Drift, E.
(2004)
Dry etching of SiC in inductively coupled Cl2/Ar plasma.
Journal of Physics D: Applied Physics, 37 (13), .
(doi:10.1088/0022-3727/37/13/012).
Abstract
Inductively coupled Cl2/Ar plasma etching of 4H–SiC has been studied. The SiC etch rate has been investigated as a function of average ion energy, Ar concentration in the gas mixtures, inductively coupled plasma power, work pressure and substrate temperature. The etch mechanism has been investigated by correlating the ion current density and relative atomic chlorine content to the etch rate under various etch conditions. For the first time, it has been found that the etch rate of SiC increases by about 50% at lower substrate temperatures (-80°C) than at high substrate temperatures (150°C) with the highest SiC etch rate of 230 nm min^-1 being achieved at a substrate temperature of -80°C.
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Published date: 2004
Identifiers
Local EPrints ID: 23539
URI: http://eprints.soton.ac.uk/id/eprint/23539
ISSN: 0022-3727
PURE UUID: 85b8d3aa-38cb-4064-a9ca-5e5db8c3da6c
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Date deposited: 23 Mar 2006
Last modified: 16 Mar 2024 03:47
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Contributors
Author:
N.O.V. Plank
Author:
M.A. Blaw
Author:
R. Cheung
Author:
E. van der Drift
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