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Dry etching of SiC in inductively coupled Cl2/Ar plasma

Record type: Article

Inductively coupled Cl2/Ar plasma etching of 4H–SiC has been studied. The SiC etch rate has been investigated as a function of average ion energy, Ar concentration in the gas mixtures, inductively coupled plasma power, work pressure and substrate temperature. The etch mechanism has been investigated by correlating the ion current density and relative atomic chlorine content to the etch rate under various etch conditions. For the first time, it has been found that the etch rate of SiC increases by about 50% at lower substrate temperatures (-80°C) than at high substrate temperatures (150°C) with the highest SiC etch rate of 230 nm min^-1 being achieved at a substrate temperature of -80°C.

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Citation

Jiang, Liudi, Plank, N.O.V., Blaw, M.A., Cheung, R. and van der Drift, E. (2004) Dry etching of SiC in inductively coupled Cl2/Ar plasma Journal of Physics D: Applied Physics, 37, (13), pp. 1809-1814. (doi:10.1088/0022-3727/37/13/012).

More information

Published date: 2004

Identifiers

Local EPrints ID: 23539
URI: http://eprints.soton.ac.uk/id/eprint/23539
ISSN: 0022-3727
PURE UUID: 85b8d3aa-38cb-4064-a9ca-5e5db8c3da6c
ORCID for Liudi Jiang: ORCID iD orcid.org/0000-0002-3400-825X

Catalogue record

Date deposited: 23 Mar 2006
Last modified: 17 Jul 2017 16:17

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Contributors

Author: Liudi Jiang ORCID iD
Author: N.O.V. Plank
Author: M.A. Blaw
Author: R. Cheung
Author: E. van der Drift

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