Impact of Ar addition to inductively coupled plasma etching of SiC in SF6/O2
Impact of Ar addition to inductively coupled plasma etching of SiC in SF6/O2
The influence of Ar addition to SF6/O2 gas mixtures has been investigated for inductively coupled plasma (ICP) etching of SiC with a view to improve both etch rate and etched surface microstructure. SiC etch rates have been studied as a function of Ar concentration, gas flow rates, applied ICP power, chuck power and chamber pressure. SiC etch rate, surface morphology, surface chemistry and etch profiles obtained in SF6/O2/Ar gas mixtures have been compared with those of SiC-etched in SF6/O2 gas mixtures under similar conditions. It was found that, compared with SF6/O2 (4:1) ICP-etched SiC in our studies, smoother surfaces and significant reduction of fluorine-related etch residues can be obtained by optimum Ar addition. SiC etch rate in SF6/O2 gas mixtures can be increased by over 5% with optimum Ar%. The highest SiC etch rate achieved here is approximately 500 nm/min in SF6/O2/Ar gas mixtures. The influence of Ar addition on the SiC etch profile has also been studied.
silicon carbide, inductively coupled plasma, etch rate
306-311
Jiang, Liudi
374f2414-51f0-418f-a316-e7db0d6dc4d1
Cheung, R.
45525b9d-cadc-486b-be31-ffc764a9b93e
2004
Jiang, Liudi
374f2414-51f0-418f-a316-e7db0d6dc4d1
Cheung, R.
45525b9d-cadc-486b-be31-ffc764a9b93e
Jiang, Liudi and Cheung, R.
(2004)
Impact of Ar addition to inductively coupled plasma etching of SiC in SF6/O2.
Microelectronic Engineering, 73-74, .
(doi:10.1016/j.mee.2004.02.058).
Abstract
The influence of Ar addition to SF6/O2 gas mixtures has been investigated for inductively coupled plasma (ICP) etching of SiC with a view to improve both etch rate and etched surface microstructure. SiC etch rates have been studied as a function of Ar concentration, gas flow rates, applied ICP power, chuck power and chamber pressure. SiC etch rate, surface morphology, surface chemistry and etch profiles obtained in SF6/O2/Ar gas mixtures have been compared with those of SiC-etched in SF6/O2 gas mixtures under similar conditions. It was found that, compared with SF6/O2 (4:1) ICP-etched SiC in our studies, smoother surfaces and significant reduction of fluorine-related etch residues can be obtained by optimum Ar addition. SiC etch rate in SF6/O2 gas mixtures can be increased by over 5% with optimum Ar%. The highest SiC etch rate achieved here is approximately 500 nm/min in SF6/O2/Ar gas mixtures. The influence of Ar addition on the SiC etch profile has also been studied.
This record has no associated files available for download.
More information
Published date: 2004
Keywords:
silicon carbide, inductively coupled plasma, etch rate
Identifiers
Local EPrints ID: 23542
URI: http://eprints.soton.ac.uk/id/eprint/23542
ISSN: 0167-9317
PURE UUID: 8151083d-073c-4256-9b14-e19068f45830
Catalogue record
Date deposited: 23 Mar 2006
Last modified: 16 Mar 2024 03:47
Export record
Altmetrics
Contributors
Author:
R. Cheung
Download statistics
Downloads from ePrints over the past year. Other digital versions may also be available to download e.g. from the publisher's website.
View more statistics
