Surface characterisation of inductively coupled plasma etched SiC in SF6/O2
Surface characterisation of inductively coupled plasma etched SiC in SF6/O2
An inductively coupled plasma (ICP) system has been used to dry etch 4H silicon carbide (SiC) substrate samples in SF6/O2 gas mixture. Under different etching conditions, etch rates have been studied. Dry etch-induced surface chemical bonding modifications have been systematically investigated using X-ray photoelectron spectroscopy (XPS). Various C–F bonds have been observed as etching products on the etched SiC surface. The increase of bias voltage and etch rate enhance not only the intensity of these C–F bonds but also the relative concentration of covalent C–F bonds on the etched SiC surfaces. Atomic force microscopy (AFM) results indicate that our etching process does not induce roughness on the etched surface even at higher bias voltages.
silicon carbide (sic), inductively coupled plasma, dry etching, x-ray photoelectron spectroscopy (xps)
369-375
Jiang, Liudi
374f2414-51f0-418f-a316-e7db0d6dc4d1
Plank, N.O.V.
b4b5fc7f-6622-4a69-aff6-714ed6ee3155
Cheung, R.
45525b9d-cadc-486b-be31-ffc764a9b93e
Brown, R.
b9108870-6092-4963-b323-be7254c71976
Mount, A.
3e17321d-9217-4072-8cb9-49154f9cbfe6
2003
Jiang, Liudi
374f2414-51f0-418f-a316-e7db0d6dc4d1
Plank, N.O.V.
b4b5fc7f-6622-4a69-aff6-714ed6ee3155
Cheung, R.
45525b9d-cadc-486b-be31-ffc764a9b93e
Brown, R.
b9108870-6092-4963-b323-be7254c71976
Mount, A.
3e17321d-9217-4072-8cb9-49154f9cbfe6
Jiang, Liudi, Plank, N.O.V., Cheung, R., Brown, R. and Mount, A.
(2003)
Surface characterisation of inductively coupled plasma etched SiC in SF6/O2.
Microelectronic Engineering, 67-68, .
(doi:10.1016/S0167-9317(03)00092-3).
Abstract
An inductively coupled plasma (ICP) system has been used to dry etch 4H silicon carbide (SiC) substrate samples in SF6/O2 gas mixture. Under different etching conditions, etch rates have been studied. Dry etch-induced surface chemical bonding modifications have been systematically investigated using X-ray photoelectron spectroscopy (XPS). Various C–F bonds have been observed as etching products on the etched SiC surface. The increase of bias voltage and etch rate enhance not only the intensity of these C–F bonds but also the relative concentration of covalent C–F bonds on the etched SiC surfaces. Atomic force microscopy (AFM) results indicate that our etching process does not induce roughness on the etched surface even at higher bias voltages.
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Published date: 2003
Keywords:
silicon carbide (sic), inductively coupled plasma, dry etching, x-ray photoelectron spectroscopy (xps)
Identifiers
Local EPrints ID: 23546
URI: http://eprints.soton.ac.uk/id/eprint/23546
ISSN: 0167-9317
PURE UUID: 13326281-37c8-4168-8c69-2b8659faaf09
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Date deposited: 24 Mar 2006
Last modified: 16 Mar 2024 03:47
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Contributors
Author:
N.O.V. Plank
Author:
R. Cheung
Author:
R. Brown
Author:
A. Mount
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