The electrical characteristics of 4H-SiC Schottky diodes after ICP etching
The electrical characteristics of 4H-SiC Schottky diodes after ICP etching
964
Plank, N.
c7cd375d-b6a9-44cf-a32f-4a3a1ceac093
Jiang, Liudi
374f2414-51f0-418f-a316-e7db0d6dc4d1
Gundlach, A.M.
bd3cd1a8-6277-454f-aae4-1b1779ea62a7
Cheung, R.
45525b9d-cadc-486b-be31-ffc764a9b93e
2003
Plank, N.
c7cd375d-b6a9-44cf-a32f-4a3a1ceac093
Jiang, Liudi
374f2414-51f0-418f-a316-e7db0d6dc4d1
Gundlach, A.M.
bd3cd1a8-6277-454f-aae4-1b1779ea62a7
Cheung, R.
45525b9d-cadc-486b-be31-ffc764a9b93e
Plank, N., Jiang, Liudi, Gundlach, A.M. and Cheung, R.
(2003)
The electrical characteristics of 4H-SiC Schottky diodes after ICP etching.
Journal of Electronic Materials, 32, .
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Published date: 2003
Identifiers
Local EPrints ID: 23548
URI: http://eprints.soton.ac.uk/id/eprint/23548
ISSN: 0361-5235
PURE UUID: c8ea714c-4e2f-4d1a-86fb-1c2684402a37
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Date deposited: 24 Mar 2006
Last modified: 28 Apr 2022 01:55
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Author:
N. Plank
Author:
A.M. Gundlach
Author:
R. Cheung
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