The effect of plasma etching on the electrical characteristics of 4H-SiC Schottky diodes
The effect of plasma etching on the electrical characteristics of 4H-SiC Schottky diodes
0878499202
689-692
Trans Tech Publications Ltd
Plank, N.O.V.
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Jiang, Liudi
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Gundlach, A.M.
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Cheung, R.
45525b9d-cadc-486b-be31-ffc764a9b93e
2002
Plank, N.O.V.
b4b5fc7f-6622-4a69-aff6-714ed6ee3155
Jiang, Liudi
1db61277-e00b-4966-9576-7b274d0900b6
Gundlach, A.M.
bd3cd1a8-6277-454f-aae4-1b1779ea62a7
Cheung, R.
45525b9d-cadc-486b-be31-ffc764a9b93e
Plank, N.O.V., Jiang, Liudi, Gundlach, A.M. and Cheung, R.
(2002)
The effect of plasma etching on the electrical characteristics of 4H-SiC Schottky diodes.
Bergman, Peder and Janzén, Erik
(eds.)
In Silicon Carbide and Related Materials - 2002.
Trans Tech Publications Ltd.
.
Record type:
Conference or Workshop Item
(Paper)
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More information
Published date: 2002
Additional Information:
Series ISSN 0255-5476. Conference paper: MoP3-16
Venue - Dates:
ECSERM 2002: 4th European Conference on Silicon Carbide and Related Materials, Linköping, Sweden, 2002-09-01 - 2002-09-05
Identifiers
Local EPrints ID: 23549
URI: http://eprints.soton.ac.uk/id/eprint/23549
ISBN: 0878499202
PURE UUID: c448ec3b-cd10-466a-ab26-736973911f9e
Catalogue record
Date deposited: 05 Jun 2006
Last modified: 07 Dec 2023 18:00
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Contributors
Author:
N.O.V. Plank
Author:
Liudi Jiang
Author:
A.M. Gundlach
Author:
R. Cheung
Editor:
Peder Bergman
Editor:
Erik Janzén
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