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The effect of plasma etching on the electrical characteristics of 4H-SiC Schottky diodes

Record type: Conference or Workshop Item (Paper)

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Citation

Plank, N.O.V., Jiang, Liudi, Gundlach, A.M. and Cheung, R., (2002) The effect of plasma etching on the electrical characteristics of 4H-SiC Schottky diodes Bergman, Peder and Janzén, Erik (eds.) In Silicon Carbide and Related Materials - 2002. Trans Tech., pp. 689-692.

More information

Published date: 2002
Additional Information: Series ISSN 0255-5476. Conference paper: MoP3-16
Venue - Dates: ECSERM 2002: 4th European Conference on Silicon Carbide and Related Materials, 2002-09-01 - 2002-09-05

Identifiers

Local EPrints ID: 23549
URI: http://eprints.soton.ac.uk/id/eprint/23549
ISBN: 0878499202
PURE UUID: c448ec3b-cd10-466a-ab26-736973911f9e

Catalogue record

Date deposited: 05 Jun 2006
Last modified: 17 Jul 2017 16:17

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Contributors

Author: N.O.V. Plank
Author: Liudi Jiang
Author: A.M. Gundlach
Author: R. Cheung
Editor: Peder Bergman
Editor: Erik Janzén

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