Formation of cubic boron nitride films by r.f. magnetron sputtering

Jiang, Liudi, Fitzgerald, A.G., Rose, M.J, Lousa, A. and Gimeno, S. (2002) Formation of cubic boron nitride films by r.f. magnetron sputtering. Surface and Interface Analysis, 34 (1), 732-734. (doi:10.1002/sia.1399).

Abstract

Boron nitride thin films have been deposited on silicon by tuned substrate r.f. magnetron sputtering from a sintered hexagonal BN target using a mixture of Ar (90%) and N2 (10%) as sputtering gas at different substrate bias conditions. The deposited films have been characterized by Fourier transform infrared spectroscopy (FTIR) and x-ray photoelectron spectroscopy (XPS). Both FTIR and XPS results show that the formation of nearly pure cubic boron nitride films were achieved when the films were deposited by a two-step process at a lower substrate bias voltage after the initial formation of the cubic boron nitride layer. Also, as indicated by FTIR measurements, this two-step process caused a reduction of the residual stress in the deposited films and no re-sputtering effects were present during the cubic BN growing process.

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Contributors

Author: Liudi Jiang

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