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Formation of cubic boron nitride films by r.f. magnetron sputtering

Formation of cubic boron nitride films by r.f. magnetron sputtering
Formation of cubic boron nitride films by r.f. magnetron sputtering
Boron nitride thin films have been deposited on silicon by tuned substrate r.f. magnetron sputtering from a sintered hexagonal BN target using a mixture of Ar (90%) and N2 (10%) as sputtering gas at different substrate bias conditions. The deposited films have been characterized by Fourier transform infrared spectroscopy (FTIR) and x-ray photoelectron spectroscopy (XPS). Both FTIR and XPS results show that the formation of nearly pure cubic boron nitride films were achieved when the films were deposited by a two-step process at a lower substrate bias voltage after the initial formation of the cubic boron nitride layer. Also, as indicated by FTIR measurements, this two-step process caused a reduction of the residual stress in the deposited films and no re-sputtering effects were present during the cubic BN growing process.
cubic boron nitride, magnetron sputtering, FTIR, XPS
0142-2421
732-734
Jiang, Liudi
374f2414-51f0-418f-a316-e7db0d6dc4d1
Fitzgerald, A.G.
a25c0ee4-638b-47b5-987e-cd8969e29345
Rose, M.J
cbdbe320-b831-4a43-bba1-d5042fc4b5e3
Lousa, A.
97add33d-9828-4945-9db9-886eca569443
Gimeno, S.
044dfb97-ffc6-4922-ab28-1fc89844f063
Jiang, Liudi
374f2414-51f0-418f-a316-e7db0d6dc4d1
Fitzgerald, A.G.
a25c0ee4-638b-47b5-987e-cd8969e29345
Rose, M.J
cbdbe320-b831-4a43-bba1-d5042fc4b5e3
Lousa, A.
97add33d-9828-4945-9db9-886eca569443
Gimeno, S.
044dfb97-ffc6-4922-ab28-1fc89844f063

Jiang, Liudi, Fitzgerald, A.G., Rose, M.J, Lousa, A. and Gimeno, S. (2002) Formation of cubic boron nitride films by r.f. magnetron sputtering. Surface and Interface Analysis, 34 (1), 732-734. (doi:10.1002/sia.1399).

Record type: Article

Abstract

Boron nitride thin films have been deposited on silicon by tuned substrate r.f. magnetron sputtering from a sintered hexagonal BN target using a mixture of Ar (90%) and N2 (10%) as sputtering gas at different substrate bias conditions. The deposited films have been characterized by Fourier transform infrared spectroscopy (FTIR) and x-ray photoelectron spectroscopy (XPS). Both FTIR and XPS results show that the formation of nearly pure cubic boron nitride films were achieved when the films were deposited by a two-step process at a lower substrate bias voltage after the initial formation of the cubic boron nitride layer. Also, as indicated by FTIR measurements, this two-step process caused a reduction of the residual stress in the deposited films and no re-sputtering effects were present during the cubic BN growing process.

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More information

Published date: 2002
Keywords: cubic boron nitride, magnetron sputtering, FTIR, XPS

Identifiers

Local EPrints ID: 23552
URI: http://eprints.soton.ac.uk/id/eprint/23552
ISSN: 0142-2421
PURE UUID: e3136a01-d30c-4709-b899-cfc1eee02bdf
ORCID for Liudi Jiang: ORCID iD orcid.org/0000-0002-3400-825X

Catalogue record

Date deposited: 22 Mar 2006
Last modified: 07 Aug 2019 00:41

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Contributors

Author: Liudi Jiang ORCID iD
Author: A.G. Fitzgerald
Author: M.J Rose
Author: A. Lousa
Author: S. Gimeno

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