Microstructural properties of amorphous carbon nitride films synthesized by dc magnetron sputtering.
Microstructural properties of amorphous carbon nitride films synthesized by dc magnetron sputtering.
Amorphous carbon nitride (a-C:N) films have been prepared on silicon(1 0 0) substrates by direct current magnetron sputtering of graphite using a gaseous mixture of Ar and N2. Raman spectra have shown that these a-C:N films have a graphitic structure. The incorporation of nitrogen in the films has been confirmed by Fourier transform infrared (FTIR) spectroscopy. Graphitic and disordered sp2-bonded carbon which are present in Raman spectra and are normally forbidden (not observed) in FTIR become infrared active in our films as the symmetry of the hexagonal carbon rings is broken by nitrogen incorporation. X-ray photoelectron spectroscopy has been used to study the type of chemical bonding in these a-C:N films. The C 1s and N 1s X-ray photoelectron peaks have been deconvoluted and studied. We have found that for the C6-point triple bond; length half of m-dashN and C=N components of the C 1s and N 1s photoelectron peaks, there is a maximum peak intensity ratio of C6-point triple bond; length half of m-dashN:C=N in the films deposited when the gaseous mixture contains 35% N2 in the sputter gas.
amorphous carbon nitride, microstructure, XPS
525-530
Fitzgerald, A.G.
a25c0ee4-638b-47b5-987e-cd8969e29345
Jiang, Liudi
374f2414-51f0-418f-a316-e7db0d6dc4d1
Rose, M.J.
bd6c0b8a-1e4e-4ce8-be63-6c0bb1cc59a4
Dines, T.J.
d8199d2d-3a39-4432-8c35-50882971722c
2001
Fitzgerald, A.G.
a25c0ee4-638b-47b5-987e-cd8969e29345
Jiang, Liudi
374f2414-51f0-418f-a316-e7db0d6dc4d1
Rose, M.J.
bd6c0b8a-1e4e-4ce8-be63-6c0bb1cc59a4
Dines, T.J.
d8199d2d-3a39-4432-8c35-50882971722c
Fitzgerald, A.G., Jiang, Liudi, Rose, M.J. and Dines, T.J.
(2001)
Microstructural properties of amorphous carbon nitride films synthesized by dc magnetron sputtering.
Applied Surface Science, 175-176, .
(doi:10.1016/S0169-4332(01)00107-6).
Abstract
Amorphous carbon nitride (a-C:N) films have been prepared on silicon(1 0 0) substrates by direct current magnetron sputtering of graphite using a gaseous mixture of Ar and N2. Raman spectra have shown that these a-C:N films have a graphitic structure. The incorporation of nitrogen in the films has been confirmed by Fourier transform infrared (FTIR) spectroscopy. Graphitic and disordered sp2-bonded carbon which are present in Raman spectra and are normally forbidden (not observed) in FTIR become infrared active in our films as the symmetry of the hexagonal carbon rings is broken by nitrogen incorporation. X-ray photoelectron spectroscopy has been used to study the type of chemical bonding in these a-C:N films. The C 1s and N 1s X-ray photoelectron peaks have been deconvoluted and studied. We have found that for the C6-point triple bond; length half of m-dashN and C=N components of the C 1s and N 1s photoelectron peaks, there is a maximum peak intensity ratio of C6-point triple bond; length half of m-dashN:C=N in the films deposited when the gaseous mixture contains 35% N2 in the sputter gas.
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Published date: 2001
Keywords:
amorphous carbon nitride, microstructure, XPS
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Local EPrints ID: 23556
URI: http://eprints.soton.ac.uk/id/eprint/23556
ISSN: 0169-4332
PURE UUID: a4551ac4-4f5a-449b-bfed-3f8a62382500
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Date deposited: 28 Mar 2006
Last modified: 16 Mar 2024 03:47
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Author:
A.G. Fitzgerald
Author:
M.J. Rose
Author:
T.J. Dines
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