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Microstructural properties of amorphous carbon nitride films synthesized by dc magnetron sputtering.

Record type: Article

Amorphous carbon nitride (a-C:N) films have been prepared on silicon(1 0 0) substrates by direct current magnetron sputtering of graphite using a gaseous mixture of Ar and N2. Raman spectra have shown that these a-C:N films have a graphitic structure. The incorporation of nitrogen in the films has been confirmed by Fourier transform infrared (FTIR) spectroscopy. Graphitic and disordered sp2-bonded carbon which are present in Raman spectra and are normally forbidden (not observed) in FTIR become infrared active in our films as the symmetry of the hexagonal carbon rings is broken by nitrogen incorporation. X-ray photoelectron spectroscopy has been used to study the type of chemical bonding in these a-C:N films. The C 1s and N 1s X-ray photoelectron peaks have been deconvoluted and studied. We have found that for the C6-point triple bond; length half of m-dashN and C=N components of the C 1s and N 1s photoelectron peaks, there is a maximum peak intensity ratio of C6-point triple bond; length half of m-dashN:C=N in the films deposited when the gaseous mixture contains 35% N2 in the sputter gas.

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Citation

Fitzgerald, A.G., Jiang, Liudi, Rose, M.J. and Dines, T.J. (2001) Microstructural properties of amorphous carbon nitride films synthesized by dc magnetron sputtering. Applied Surface Science, 175-176, pp. 525-530. (doi:10.1016/S0169-4332(01)00107-6).

More information

Published date: 2001
Keywords: amorphous carbon nitride, microstructure, XPS

Identifiers

Local EPrints ID: 23556
URI: http://eprints.soton.ac.uk/id/eprint/23556
ISSN: 0169-4332
PURE UUID: a4551ac4-4f5a-449b-bfed-3f8a62382500
ORCID for Liudi Jiang: ORCID iD orcid.org/0000-0002-3400-825X

Catalogue record

Date deposited: 28 Mar 2006
Last modified: 17 Jul 2017 16:17

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Contributors

Author: A.G. Fitzgerald
Author: Liudi Jiang ORCID iD
Author: M.J. Rose
Author: T.J. Dines

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