Mechanics of direct wafer bonding
Mechanics of direct wafer bonding
Direct wafer bonding is a manufacturing process that is used in the fabrication of electronic, optical and mechanical microsystems. The initial step in the process requires that the wafers are sufficiently smooth, flat and compliant such that short-range surface forces can elastically deform the wafers and bring the surfaces into complete contact. Analytical and computational mechanics models of this adhesion process as well as experiments that validate these models are presented in this work. An energy-based analysis is used to develop the models that allow acceptable limits of wafer-scale flatness variations to be predicted. The analytical models provide basic insight into the process while the finite-element-based model reported provides a method to analyse a broad range of realistic cases, including the bonding of wafers with etch patterns and arbitrary geometries. Experiments, in which patterned silicon wafers with different magnitudes of wafer-scale shape variations were bonded, were performed and the results demonstrate that the proposed models can accurately predict the size and shape of the bonded area based on the wafer geometry, elastic properties and work of adhesion.
wafer bonding, adhesion, surface forces, JKR
171-188
Turner, Kevin
2c21c490-6978-493d-b621-150420af1cd1
Spearing, S.M.
9e56a7b3-e0e8-47b1-a6b4-db676ed3c17a
8 January 2006
Turner, Kevin
2c21c490-6978-493d-b621-150420af1cd1
Spearing, S.M.
9e56a7b3-e0e8-47b1-a6b4-db676ed3c17a
Turner, Kevin and Spearing, S.M.
(2006)
Mechanics of direct wafer bonding.
Proceedings of the Royal Society A, 462 (2065), .
(doi:10.1098/rspa.2005.1571).
Abstract
Direct wafer bonding is a manufacturing process that is used in the fabrication of electronic, optical and mechanical microsystems. The initial step in the process requires that the wafers are sufficiently smooth, flat and compliant such that short-range surface forces can elastically deform the wafers and bring the surfaces into complete contact. Analytical and computational mechanics models of this adhesion process as well as experiments that validate these models are presented in this work. An energy-based analysis is used to develop the models that allow acceptable limits of wafer-scale flatness variations to be predicted. The analytical models provide basic insight into the process while the finite-element-based model reported provides a method to analyse a broad range of realistic cases, including the bonding of wafers with etch patterns and arbitrary geometries. Experiments, in which patterned silicon wafers with different magnitudes of wafer-scale shape variations were bonded, were performed and the results demonstrate that the proposed models can accurately predict the size and shape of the bonded area based on the wafer geometry, elastic properties and work of adhesion.
This record has no associated files available for download.
More information
Published date: 8 January 2006
Keywords:
wafer bonding, adhesion, surface forces, JKR
Identifiers
Local EPrints ID: 23954
URI: http://eprints.soton.ac.uk/id/eprint/23954
ISSN: 1364-5021
PURE UUID: 547b9f2b-7060-425a-b29b-c2c9fd120b2a
Catalogue record
Date deposited: 14 Mar 2006
Last modified: 16 Mar 2024 03:37
Export record
Altmetrics
Contributors
Author:
Kevin Turner
Download statistics
Downloads from ePrints over the past year. Other digital versions may also be available to download e.g. from the publisher's website.
View more statistics