Characterisation of the effectiveness of carbon incorporation in SiGe for the elimination of parasitic energy barriers in SiGe HBT's
Characterisation of the effectiveness of carbon incorporation in SiGe for the elimination of parasitic energy barriers in SiGe HBT's
 
  An electrical method is applied to SiGe and SiGeC HBTs to extract the bandgap narrowing in the base layer and to characterise the presence of parasitic energy barriers in the conduction band, arising from transient enhanced boron diffusion from the SiGe layer. It is shown that a background carbon concentration with the base of approximately 1E20cm-3 eliminates parasitic energy barriers at the C/B junction and hence shows that transient enhanced diffusion of boron from the base has been completely suppressed.
  
  116-118
  
    
      Anteney, I.M.
      
        baf25438-c635-4a75-a4c9-e7c0e2e84050
      
     
  
    
      Lippert, G.
      
        c32982f9-eea8-4d3e-8d89-2963ed79ea04
      
     
  
    
      Ashburn, P.
      
        68cef6b7-205b-47aa-9efb-f1f09f5c1038
      
     
  
    
      Osten, H.J.
      
        53d52929-fbe6-4a3f-8208-a9122b0fc0e5
      
     
  
    
      Heinemann, B.
      
        ea7bad85-d18e-4ffa-8815-f2f3c4bd48cb
      
     
  
    
      Parker, G.J.
      
        0be0b760-c634-410d-adf6-076c6636be7e
      
     
  
    
      Knoll, D.
      
        79db3b6e-dac5-4af6-aafc-f530dc963ac6
      
     
  
  
   
  
  
    
      1999
    
    
  
  
    
      Anteney, I.M.
      
        baf25438-c635-4a75-a4c9-e7c0e2e84050
      
     
  
    
      Lippert, G.
      
        c32982f9-eea8-4d3e-8d89-2963ed79ea04
      
     
  
    
      Ashburn, P.
      
        68cef6b7-205b-47aa-9efb-f1f09f5c1038
      
     
  
    
      Osten, H.J.
      
        53d52929-fbe6-4a3f-8208-a9122b0fc0e5
      
     
  
    
      Heinemann, B.
      
        ea7bad85-d18e-4ffa-8815-f2f3c4bd48cb
      
     
  
    
      Parker, G.J.
      
        0be0b760-c634-410d-adf6-076c6636be7e
      
     
  
    
      Knoll, D.
      
        79db3b6e-dac5-4af6-aafc-f530dc963ac6
      
     
  
       
    
 
  
    
      
  
  
  
  
  
  
    Anteney, I.M., Lippert, G., Ashburn, P., Osten, H.J., Heinemann, B., Parker, G.J. and Knoll, D.
  
  
  
  
   
    (1999)
  
  
    
    Characterisation of the effectiveness of carbon incorporation in SiGe for the elimination of parasitic energy barriers in SiGe HBT's.
  
  
  
  
    IEEE Electron Device Letters, 20, .
  
   
  
  
   
  
  
  
  
  
   
  
    
    
      
        
          Abstract
          An electrical method is applied to SiGe and SiGeC HBTs to extract the bandgap narrowing in the base layer and to characterise the presence of parasitic energy barriers in the conduction band, arising from transient enhanced boron diffusion from the SiGe layer. It is shown that a background carbon concentration with the base of approximately 1E20cm-3 eliminates parasitic energy barriers at the C/B junction and hence shows that transient enhanced diffusion of boron from the base has been completely suppressed.
         
      
      
        
          
            
  
    Text
 1999_Anteney_EDL_diffusion_in_SiGeC.pdf
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      Published date: 1999
 
    
  
  
    
  
    
  
    
  
    
  
    
  
    
  
    
     
        Organisations:
        Nanoelectronics and Nanotechnology
      
    
  
    
  
  
  
    
  
  
        Identifiers
        Local EPrints ID: 250679
        URI: http://eprints.soton.ac.uk/id/eprint/250679
        
        
        
          ISSN: 0741-3106
        
        
          PURE UUID: 0e9d7e6e-eb9f-4584-9c19-39c9d0ee1b18
        
  
    
        
          
        
    
        
          
        
    
        
          
            
          
        
    
        
          
        
    
        
          
        
    
        
          
        
    
        
          
        
    
  
  Catalogue record
  Date deposited: 06 Jan 2004
  Last modified: 14 Mar 2024 04:53
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      Contributors
      
          
          Author:
          
            
            
              I.M. Anteney
            
          
        
      
          
          Author:
          
            
            
              G. Lippert
            
          
        
      
        
      
          
          Author:
          
            
            
              H.J. Osten
            
          
        
      
          
          Author:
          
            
            
              B. Heinemann
            
          
        
      
          
          Author:
          
            
            
              G.J. Parker
            
          
        
      
          
          Author:
          
            
            
              D. Knoll
            
          
        
      
      
      
    
  
   
  
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