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Characterisation of the effectiveness of carbon incorporation in SiGe for the elimination of parasitic energy barriers in SiGe HBT's

Characterisation of the effectiveness of carbon incorporation in SiGe for the elimination of parasitic energy barriers in SiGe HBT's
Characterisation of the effectiveness of carbon incorporation in SiGe for the elimination of parasitic energy barriers in SiGe HBT's
An electrical method is applied to SiGe and SiGeC HBTs to extract the bandgap narrowing in the base layer and to characterise the presence of parasitic energy barriers in the conduction band, arising from transient enhanced boron diffusion from the SiGe layer. It is shown that a background carbon concentration with the base of approximately 1E20cm-3 eliminates parasitic energy barriers at the C/B junction and hence shows that transient enhanced diffusion of boron from the base has been completely suppressed.
0741-3106
116-118
Anteney, I.M.
baf25438-c635-4a75-a4c9-e7c0e2e84050
Lippert, G.
c32982f9-eea8-4d3e-8d89-2963ed79ea04
Ashburn, P.
68cef6b7-205b-47aa-9efb-f1f09f5c1038
Osten, H.J.
53d52929-fbe6-4a3f-8208-a9122b0fc0e5
Heinemann, B.
ea7bad85-d18e-4ffa-8815-f2f3c4bd48cb
Parker, G.J.
0be0b760-c634-410d-adf6-076c6636be7e
Knoll, D.
79db3b6e-dac5-4af6-aafc-f530dc963ac6
Anteney, I.M.
baf25438-c635-4a75-a4c9-e7c0e2e84050
Lippert, G.
c32982f9-eea8-4d3e-8d89-2963ed79ea04
Ashburn, P.
68cef6b7-205b-47aa-9efb-f1f09f5c1038
Osten, H.J.
53d52929-fbe6-4a3f-8208-a9122b0fc0e5
Heinemann, B.
ea7bad85-d18e-4ffa-8815-f2f3c4bd48cb
Parker, G.J.
0be0b760-c634-410d-adf6-076c6636be7e
Knoll, D.
79db3b6e-dac5-4af6-aafc-f530dc963ac6

Anteney, I.M., Lippert, G., Ashburn, P., Osten, H.J., Heinemann, B., Parker, G.J. and Knoll, D. (1999) Characterisation of the effectiveness of carbon incorporation in SiGe for the elimination of parasitic energy barriers in SiGe HBT's. IEEE Electron Device Letters, 20, 116-118.

Record type: Article

Abstract

An electrical method is applied to SiGe and SiGeC HBTs to extract the bandgap narrowing in the base layer and to characterise the presence of parasitic energy barriers in the conduction band, arising from transient enhanced boron diffusion from the SiGe layer. It is shown that a background carbon concentration with the base of approximately 1E20cm-3 eliminates parasitic energy barriers at the C/B junction and hence shows that transient enhanced diffusion of boron from the base has been completely suppressed.

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Published date: 1999
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 250679
URI: http://eprints.soton.ac.uk/id/eprint/250679
ISSN: 0741-3106
PURE UUID: 0e9d7e6e-eb9f-4584-9c19-39c9d0ee1b18

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Date deposited: 06 Jan 2004
Last modified: 22 Sep 2020 16:38

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