Gregory, H J, Bonar, J M, Ashburn, P and Parker, G J (1996) Fully self-aligned Si bipolar transistor with collector and base grown using silane-only selective epitaxy. Electronics Letters, 32 (9), 850-851. (doi:10.1049/el:19960570).
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Published date: April 1996
Organisations:
Nanoelectronics and Nanotechnology
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Local EPrints ID: 250694
URI: http://eprints.soton.ac.uk/id/eprint/250694
ISSN: 0013-5194
PURE UUID: 7a8abb06-8b37-4544-9843-4fe4751fb850
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Date deposited: 25 Aug 1999
Last modified: 16 Mar 2024 07:27
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