"Fully self-aligned Si bipolar transistor with collector and base grown using silane-only selective epitaxy": Vol 32


Gregory, H J, Bonar, J M, Ashburn, P and Parker, G J (1996) "Fully self-aligned Si bipolar transistor with collector and base grown using silane-only selective epitaxy": Vol 32

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Item Type: Other
Organisations: Nanoelectronics and Nanotechnology
ePrint ID: 250694
Date :
Date Event
1996Published
Date Deposited: 25 Aug 1999
Last Modified: 18 Apr 2017 00:18
Further Information:Google Scholar
URI: http://eprints.soton.ac.uk/id/eprint/250694

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