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Fully self-aligned Si bipolar transistor with collector and base grown using silane-only selective epitaxy

Fully self-aligned Si bipolar transistor with collector and base grown using silane-only selective epitaxy
Fully self-aligned Si bipolar transistor with collector and base grown using silane-only selective epitaxy
0013-5194
850-851
Gregory, H J
24f28e8b-5ed2-4418-ac3e-a0c8e77588d2
Bonar, J M
5ee6b25a-3e67-4a6d-9854-5e1e079d50b8
Ashburn, P
68cef6b7-205b-47aa-9efb-f1f09f5c1038
Parker, G J
b140c5a5-94c4-44f3-95a3-c5054a9fe38d
Gregory, H J
24f28e8b-5ed2-4418-ac3e-a0c8e77588d2
Bonar, J M
5ee6b25a-3e67-4a6d-9854-5e1e079d50b8
Ashburn, P
68cef6b7-205b-47aa-9efb-f1f09f5c1038
Parker, G J
b140c5a5-94c4-44f3-95a3-c5054a9fe38d

Gregory, H J, Bonar, J M, Ashburn, P and Parker, G J (1996) Fully self-aligned Si bipolar transistor with collector and base grown using silane-only selective epitaxy. Electronics Letters, 32 (9), 850-851. (doi:10.1049/el:19960570).

Record type: Article

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More information

Published date: April 1996
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 250694
URI: http://eprints.soton.ac.uk/id/eprint/250694
ISSN: 0013-5194
PURE UUID: 7a8abb06-8b37-4544-9843-4fe4751fb850

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Date deposited: 25 Aug 1999
Last modified: 16 Mar 2024 07:27

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Contributors

Author: H J Gregory
Author: J M Bonar
Author: P Ashburn
Author: G J Parker

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