Schiz, J, Moiseiwitsch, N E, Marsh, C D, Ashburn, Peter and Booker, G R (1996) Increased current gain and reduced emitter resistance in SiGe HBTs by fluorine or chlorine implantation into a polysilicon emitter contact.
Record type:
Other
This record has no associated files available for download.
More information
Published date: 1996
Additional Information:
Organisation: Proc European Solid State Device Research Conference
Organisations:
Nanoelectronics and Nanotechnology
Identifiers
Local EPrints ID: 250695
URI: http://eprints.soton.ac.uk/id/eprint/250695
PURE UUID: 9f2432a6-d046-4046-bca3-e5b1c0651576
Catalogue record
Date deposited: 25 Aug 1999
Last modified: 07 Jan 2022 23:53
Export record
Contributors
Author:
J Schiz
Author:
N E Moiseiwitsch
Author:
C D Marsh
Author:
Peter Ashburn
Author:
G R Booker
Download statistics
Downloads from ePrints over the past year. Other digital versions may also be available to download e.g. from the publisher's website.