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Increased current gain and reduced emitter resistance in SiGe HBTs by fluorine or chlorine implantation into a polysilicon emitter contact

Increased current gain and reduced emitter resistance in SiGe HBTs by fluorine or chlorine implantation into a polysilicon emitter contact
Increased current gain and reduced emitter resistance in SiGe HBTs by fluorine or chlorine implantation into a polysilicon emitter contact
Schiz, J
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Moiseiwitsch, N E
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Marsh, C D
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Ashburn, Peter
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Booker, G R
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Schiz, J
d29b4f9e-f87d-445a-962b-db8de79f45a1
Moiseiwitsch, N E
3cca82f7-300c-4ef9-9298-f68d784d3735
Marsh, C D
b5482357-2e75-49f8-8217-72e1fde37c9f
Ashburn, Peter
68cef6b7-205b-47aa-9efb-f1f09f5c1038
Booker, G R
1c5cd067-0dc6-4cd7-9e2c-9adf8ae291e9

Schiz, J, Moiseiwitsch, N E, Marsh, C D, Ashburn, Peter and Booker, G R (1996) Increased current gain and reduced emitter resistance in SiGe HBTs by fluorine or chlorine implantation into a polysilicon emitter contact.

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More information

Published date: 1996
Additional Information: Organisation: Proc European Solid State Device Research Conference
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 250695
URI: http://eprints.soton.ac.uk/id/eprint/250695
PURE UUID: 9f2432a6-d046-4046-bca3-e5b1c0651576

Catalogue record

Date deposited: 25 Aug 1999
Last modified: 07 Jan 2022 23:53

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Contributors

Author: J Schiz
Author: N E Moiseiwitsch
Author: C D Marsh
Author: Peter Ashburn
Author: G R Booker

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