Increased current gain and reduced emitter resistance in SiGe HBTs by fluorine or chlorine implantation into a polysilicon emitter contact


Schiz, J, Moiseiwitsch, N E, Marsh, C D, Ashburn, Peter and Booker, G R (1996) Increased current gain and reduced emitter resistance in SiGe HBTs by fluorine or chlorine implantation into a polysilicon emitter contact

Download

Full text not available from this repository.

Item Type: Other
Additional Information: Organisation: Proc European Solid State Device Research Conference
Organisations: Nanoelectronics and Nanotechnology
ePrint ID: 250695
Date :
Date Event
1996Published
Date Deposited: 25 Aug 1999
Last Modified: 18 Apr 2017 00:18
Further Information:Google Scholar
URI: http://eprints.soton.ac.uk/id/eprint/250695

Actions (login required)

View Item View Item