Improved base current ideality in polysilicon emitter bipolar transistors due to fast fluorine diffusion through oxide
Improved base current ideality in polysilicon emitter bipolar transistors due to fast fluorine diffusion through oxide
The fast diffusion of fluorine in polysilicon and silicon dioxide is shown to improve the base current ideality of polysilicon emitter bipolar transistors. This behaviour is explained by the passivation of interface states at the oxide/silicon interface around the perimeter of the emitter.
752-753
Schiz, J F W
6623181e-1e06-4e22-9bf3-5db9c17920bd
Ashburn, P
68cef6b7-205b-47aa-9efb-f1f09f5c1038
1999
Schiz, J F W
6623181e-1e06-4e22-9bf3-5db9c17920bd
Ashburn, P
68cef6b7-205b-47aa-9efb-f1f09f5c1038
Schiz, J F W and Ashburn, P
(1999)
Improved base current ideality in polysilicon emitter bipolar transistors due to fast fluorine diffusion through oxide.
Electronics Letters, 35 (9), .
Abstract
The fast diffusion of fluorine in polysilicon and silicon dioxide is shown to improve the base current ideality of polysilicon emitter bipolar transistors. This behaviour is explained by the passivation of interface states at the oxide/silicon interface around the perimeter of the emitter.
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Published date: 1999
Organisations:
Nanoelectronics and Nanotechnology
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Local EPrints ID: 250909
URI: http://eprints.soton.ac.uk/id/eprint/250909
ISSN: 0013-5194
PURE UUID: 9e11e55b-8c37-4dea-9fca-d79cb8d9557a
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Date deposited: 02 Apr 2001
Last modified: 09 Jan 2022 04:43
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Author:
J F W Schiz
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