Leakage current mechanisms associated with selective epitaxy in SiGe heterojunction bipolar transistors
Leakage current mechanisms associated with selective epitaxy in SiGe heterojunction bipolar transistors
2.86332.245.1
344-347
Schiz, J F W
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Bonar, J M
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Lamb, A C
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Cristiano, F
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Ashburn, P
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Hemment, P L F
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Hall, S
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Maes, H E
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Mertens, R P
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Declerck, G
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Grunbacher, H
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1999
Schiz, J F W
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Bonar, J M
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Lamb, A C
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Cristiano, F
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Ashburn, P
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Hemment, P L F
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Hall, S
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Maes, H E
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Mertens, R P
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Declerck, G
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Grunbacher, H
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Schiz, J F W, Bonar, J M, Lamb, A C, Cristiano, F, Ashburn, P, Hemment, P L F and Hall, S
(1999)
Leakage current mechanisms associated with selective epitaxy in SiGe heterojunction bipolar transistors.
Maes, H E, Mertens, R P, Declerck, G and Grunbacher, H
(eds.)
Proceedings of 29th European Solid State Device Research Conference.
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Published date: 1999
Venue - Dates:
Proceedings of 29th European Solid State Device Research Conference, 1999-01-01
Organisations:
Nanoelectronics and Nanotechnology
Identifiers
Local EPrints ID: 250911
URI: http://eprints.soton.ac.uk/id/eprint/250911
ISBN: 2.86332.245.1
PURE UUID: 32b804bb-d68f-4828-ad77-7f18771ee363
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Date deposited: 01 Oct 1999
Last modified: 10 Dec 2021 20:19
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Contributors
Author:
J F W Schiz
Author:
J M Bonar
Author:
A C Lamb
Author:
F Cristiano
Author:
P L F Hemment
Author:
S Hall
Editor:
H E Maes
Editor:
R P Mertens
Editor:
G Declerck
Editor:
H Grunbacher
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