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Leakage current mechanisms associated with selective epitaxy in SiGe heterojunction bipolar transistors

Leakage current mechanisms associated with selective epitaxy in SiGe heterojunction bipolar transistors
Leakage current mechanisms associated with selective epitaxy in SiGe heterojunction bipolar transistors
2.86332.245.1
344-347
Schiz, J F W
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Bonar, J M
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Lamb, A C
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Cristiano, F
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Ashburn, P
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Hemment, P L F
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Hall, S
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Maes, H E
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Mertens, R P
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Declerck, G
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Grunbacher, H
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Schiz, J F W
6623181e-1e06-4e22-9bf3-5db9c17920bd
Bonar, J M
5ee6b25a-3e67-4a6d-9854-5e1e079d50b8
Lamb, A C
7cac04a4-05a7-4fe5-a101-b3651b9dc5f9
Cristiano, F
d653404d-82c2-44a0-a58c-b84dc4244d91
Ashburn, P
68cef6b7-205b-47aa-9efb-f1f09f5c1038
Hemment, P L F
94618b9c-dba6-4cf6-b4d9-8770e7081532
Hall, S
f4a3297d-bb12-404d-9a02-f082ba4cbfb0
Maes, H E
337f7f8e-cf64-4b61-9e40-f8d37e8281c2
Mertens, R P
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Declerck, G
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Grunbacher, H
480999a0-a0b8-452a-b185-aab90ec44e46

Schiz, J F W, Bonar, J M, Lamb, A C, Cristiano, F, Ashburn, P, Hemment, P L F and Hall, S, (1999) Leakage current mechanisms associated with selective epitaxy in SiGe heterojunction bipolar transistors Maes, H E, Mertens, R P, Declerck, G and Grunbacher, H (eds.) At Proceedings of 29th European Solid State Device Research Conference. , pp. 344-347.

Record type: Conference or Workshop Item (Other)

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More information

Published date: 1999
Venue - Dates: Proceedings of 29th European Solid State Device Research Conference, 1999-01-01
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 250911
URI: http://eprints.soton.ac.uk/id/eprint/250911
ISBN: 2.86332.245.1
PURE UUID: 32b804bb-d68f-4828-ad77-7f18771ee363

Catalogue record

Date deposited: 01 Oct 1999
Last modified: 18 Jul 2017 10:13

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Contributors

Author: J F W Schiz
Author: J M Bonar
Author: A C Lamb
Author: F Cristiano
Author: P Ashburn
Author: P L F Hemment
Author: S Hall
Editor: H E Maes
Editor: R P Mertens
Editor: G Declerck
Editor: H Grunbacher

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