Bonar, J M, Schiz, J and Ashburn, P (1999) Selective and non-selective growth of self-aligned SiGe HBT structures by LPCVD epitaxy. Journal of Materials Science: Materials in Electronics, 10, 345-349.
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Published date: 1999
Organisations:
Nanoelectronics and Nanotechnology
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Local EPrints ID: 250912
URI: http://eprints.soton.ac.uk/id/eprint/250912
PURE UUID: 73e1e523-e716-466c-9a40-e66b968c8d0b
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Date deposited: 01 Oct 1999
Last modified: 08 Jan 2022 05:41
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