The University of Southampton
University of Southampton Institutional Repository

Selective and non-selective growth of self-aligned SiGe HBT structures by LPCVD epitaxy

Selective and non-selective growth of self-aligned SiGe HBT structures by LPCVD epitaxy
Selective and non-selective growth of self-aligned SiGe HBT structures by LPCVD epitaxy
345-349
Bonar, J M
5ee6b25a-3e67-4a6d-9854-5e1e079d50b8
Schiz, J
d29b4f9e-f87d-445a-962b-db8de79f45a1
Ashburn, P
68cef6b7-205b-47aa-9efb-f1f09f5c1038
Bonar, J M
5ee6b25a-3e67-4a6d-9854-5e1e079d50b8
Schiz, J
d29b4f9e-f87d-445a-962b-db8de79f45a1
Ashburn, P
68cef6b7-205b-47aa-9efb-f1f09f5c1038

Bonar, J M, Schiz, J and Ashburn, P (1999) Selective and non-selective growth of self-aligned SiGe HBT structures by LPCVD epitaxy. Journal of Materials Science: Materials in Electronics, 10, 345-349.

Record type: Article

Full text not available from this repository.

More information

Published date: 1999
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 250912
URI: http://eprints.soton.ac.uk/id/eprint/250912
PURE UUID: 73e1e523-e716-466c-9a40-e66b968c8d0b

Catalogue record

Date deposited: 01 Oct 1999
Last modified: 16 Jul 2019 23:09

Export record

Download statistics

Downloads from ePrints over the past year. Other digital versions may also be available to download e.g. from the publisher's website.

View more statistics

Atom RSS 1.0 RSS 2.0

Contact ePrints Soton: eprints@soton.ac.uk

ePrints Soton supports OAI 2.0 with a base URL of http://eprints.soton.ac.uk/cgi/oai2

This repository has been built using EPrints software, developed at the University of Southampton, but available to everyone to use.

We use cookies to ensure that we give you the best experience on our website. If you continue without changing your settings, we will assume that you are happy to receive cookies on the University of Southampton website.

×