Enhanced oxide break up and polysilicon regrowth using fluorine and a methanol last wafer pre clean
Enhanced oxide break up and polysilicon regrowth using fluorine and a methanol last wafer pre clean
477-480
Marsh, C D
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Moiseiwitsch, N E
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Nash, G R
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Booker, G R
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Ashburn, P
68cef6b7-205b-47aa-9efb-f1f09f5c1038
1999
Marsh, C D
b5482357-2e75-49f8-8217-72e1fde37c9f
Moiseiwitsch, N E
3cca82f7-300c-4ef9-9298-f68d784d3735
Nash, G R
b68b4787-1027-4975-b362-70dd55bc58ae
Booker, G R
1c5cd067-0dc6-4cd7-9e2c-9adf8ae291e9
Ashburn, P
68cef6b7-205b-47aa-9efb-f1f09f5c1038
Marsh, C D, Moiseiwitsch, N E, Nash, G R, Booker, G R and Ashburn, P
(1999)
Enhanced oxide break up and polysilicon regrowth using fluorine and a methanol last wafer pre clean.
Proceedings of the Microscopy of Semiconducting Materials Conference.
.
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Conference or Workshop Item
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Published date: 1999
Venue - Dates:
Proceedings of the Microscopy of Semiconducting Materials Conference, 1999-01-01
Organisations:
Nanoelectronics and Nanotechnology
Identifiers
Local EPrints ID: 250914
URI: http://eprints.soton.ac.uk/id/eprint/250914
PURE UUID: d8702c04-e9ab-4466-89d9-685b0e0d9405
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Date deposited: 04 Oct 1999
Last modified: 10 Dec 2021 20:19
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Contributors
Author:
C D Marsh
Author:
N E Moiseiwitsch
Author:
G R Nash
Author:
G R Booker
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