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Enhanced oxide break up and polysilicon regrowth using fluorine and a methanol last wafer pre clean

Enhanced oxide break up and polysilicon regrowth using fluorine and a methanol last wafer pre clean
Enhanced oxide break up and polysilicon regrowth using fluorine and a methanol last wafer pre clean
477-480
Marsh, C D
b5482357-2e75-49f8-8217-72e1fde37c9f
Moiseiwitsch, N E
3cca82f7-300c-4ef9-9298-f68d784d3735
Nash, G R
b68b4787-1027-4975-b362-70dd55bc58ae
Booker, G R
1c5cd067-0dc6-4cd7-9e2c-9adf8ae291e9
Ashburn, P
68cef6b7-205b-47aa-9efb-f1f09f5c1038
Marsh, C D
b5482357-2e75-49f8-8217-72e1fde37c9f
Moiseiwitsch, N E
3cca82f7-300c-4ef9-9298-f68d784d3735
Nash, G R
b68b4787-1027-4975-b362-70dd55bc58ae
Booker, G R
1c5cd067-0dc6-4cd7-9e2c-9adf8ae291e9
Ashburn, P
68cef6b7-205b-47aa-9efb-f1f09f5c1038

Marsh, C D, Moiseiwitsch, N E, Nash, G R, Booker, G R and Ashburn, P (1999) Enhanced oxide break up and polysilicon regrowth using fluorine and a methanol last wafer pre clean. Proceedings of the Microscopy of Semiconducting Materials Conference. pp. 477-480 .

Record type: Conference or Workshop Item (Other)

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More information

Published date: 1999
Venue - Dates: Proceedings of the Microscopy of Semiconducting Materials Conference, 1999-01-01
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 250914
URI: http://eprints.soton.ac.uk/id/eprint/250914
PURE UUID: d8702c04-e9ab-4466-89d9-685b0e0d9405

Catalogue record

Date deposited: 04 Oct 1999
Last modified: 29 Jan 2020 15:05

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