TEM structural studies of polysilicon emitter bipolar materials and devices: increased interfacial oxide break-up and polysilicon regrowth and decreased emitter resistance by fluorine implantation
TEM structural studies of polysilicon emitter bipolar materials and devices: increased interfacial oxide break-up and polysilicon regrowth and decreased emitter resistance by fluorine implantation
195-198
Marsh, C D
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Booker, G R
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Moiseiwitsch, N E
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Schiz, J F W
6623181e-1e06-4e22-9bf3-5db9c17920bd
Ashburn, P
68cef6b7-205b-47aa-9efb-f1f09f5c1038
1998
Marsh, C D
b5482357-2e75-49f8-8217-72e1fde37c9f
Booker, G R
1c5cd067-0dc6-4cd7-9e2c-9adf8ae291e9
Moiseiwitsch, N E
3cca82f7-300c-4ef9-9298-f68d784d3735
Schiz, J F W
6623181e-1e06-4e22-9bf3-5db9c17920bd
Ashburn, P
68cef6b7-205b-47aa-9efb-f1f09f5c1038
Marsh, C D, Booker, G R, Moiseiwitsch, N E, Schiz, J F W and Ashburn, P
(1998)
TEM structural studies of polysilicon emitter bipolar materials and devices: increased interfacial oxide break-up and polysilicon regrowth and decreased emitter resistance by fluorine implantation.
Proceedings of Materials Research Society Spring Meeting.
.
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Published date: 1998
Venue - Dates:
Proceedings of Materials Research Society Spring Meeting, 1998-01-01
Organisations:
Nanoelectronics and Nanotechnology
Identifiers
Local EPrints ID: 250916
URI: http://eprints.soton.ac.uk/id/eprint/250916
PURE UUID: fbad92e2-475a-4b3e-a516-a93e242788a6
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Date deposited: 01 Oct 1999
Last modified: 10 Dec 2021 20:18
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Contributors
Author:
C D Marsh
Author:
G R Booker
Author:
N E Moiseiwitsch
Author:
J F W Schiz
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