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TEM structural studies of polysilicon emitter bipolar materials and devices: increased interfacial oxide break-up and polysilicon regrowth and decreased emitter resistance by fluorine implantation

TEM structural studies of polysilicon emitter bipolar materials and devices: increased interfacial oxide break-up and polysilicon regrowth and decreased emitter resistance by fluorine implantation
TEM structural studies of polysilicon emitter bipolar materials and devices: increased interfacial oxide break-up and polysilicon regrowth and decreased emitter resistance by fluorine implantation
195-198
Marsh, C D
b5482357-2e75-49f8-8217-72e1fde37c9f
Booker, G R
1c5cd067-0dc6-4cd7-9e2c-9adf8ae291e9
Moiseiwitsch, N E
3cca82f7-300c-4ef9-9298-f68d784d3735
Schiz, J F W
6623181e-1e06-4e22-9bf3-5db9c17920bd
Ashburn, P
68cef6b7-205b-47aa-9efb-f1f09f5c1038
Marsh, C D
b5482357-2e75-49f8-8217-72e1fde37c9f
Booker, G R
1c5cd067-0dc6-4cd7-9e2c-9adf8ae291e9
Moiseiwitsch, N E
3cca82f7-300c-4ef9-9298-f68d784d3735
Schiz, J F W
6623181e-1e06-4e22-9bf3-5db9c17920bd
Ashburn, P
68cef6b7-205b-47aa-9efb-f1f09f5c1038

Marsh, C D, Booker, G R, Moiseiwitsch, N E, Schiz, J F W and Ashburn, P (1998) TEM structural studies of polysilicon emitter bipolar materials and devices: increased interfacial oxide break-up and polysilicon regrowth and decreased emitter resistance by fluorine implantation. Proceedings of Materials Research Society Spring Meeting. pp. 195-198 .

Record type: Conference or Workshop Item (Other)

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More information

Published date: 1998
Venue - Dates: Proceedings of Materials Research Society Spring Meeting, 1998-01-01
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 250916
URI: https://eprints.soton.ac.uk/id/eprint/250916
PURE UUID: fbad92e2-475a-4b3e-a516-a93e242788a6

Catalogue record

Date deposited: 01 Oct 1999
Last modified: 18 Jul 2017 10:14

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Contributors

Author: C D Marsh
Author: G R Booker
Author: N E Moiseiwitsch
Author: J F W Schiz
Author: P Ashburn

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