Anteney, I M, Ashburn, P, Parker, G J, Lippert, G and Ashburn, P (1998) Effect of carbon position in the base for the elimination of parasitic energy barriers in SiGe:C HBTs. Proceedings of European Solid State Device Research Conference. pp. 132-135 .
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Conference or Workshop Item
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Published date: 1998
Venue - Dates:
Proceedings of European Solid State Device Research Conference, 1998-01-01
Organisations:
Nanoelectronics and Nanotechnology
Identifiers
Local EPrints ID: 250917
URI: http://eprints.soton.ac.uk/id/eprint/250917
ISBN: 2.86332.234.6
PURE UUID: b6da52d0-e341-4995-a203-2b6970a7de00
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Date deposited: 01 Oct 1999
Last modified: 10 Dec 2021 20:18
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Contributors
Author:
I M Anteney
Author:
P Ashburn
Author:
G J Parker
Author:
G Lippert
Author:
P Ashburn
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