Investigation of process induced defects in SiGe/Si HBTs by deep level transient spectroscopy
Investigation of process induced defects in SiGe/Si HBTs by deep level transient spectroscopy
1745-1749
Souifi, A
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Barros, O De
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Bremond, G
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Tron, B Le
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Mouis, M
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Vincent, G
a4488e86-a932-4ad3-91a5-706e79487a78
Ashburn, P
68cef6b7-205b-47aa-9efb-f1f09f5c1038
1998
Souifi, A
c3333226-fbb8-4dc7-82a7-dd04d1f6a0d9
Barros, O De
5be2d46c-f2d8-43a9-8ca9-6a5fc034d32c
Bremond, G
25de0226-75cf-4769-9383-fbd12d6dac8a
Tron, B Le
8734f911-4acc-4f15-9802-af53da3eb223
Mouis, M
0634257a-7d39-4c77-8b86-9041ee717648
Vincent, G
a4488e86-a932-4ad3-91a5-706e79487a78
Ashburn, P
68cef6b7-205b-47aa-9efb-f1f09f5c1038
Souifi, A, Barros, O De, Bremond, G, Tron, B Le, Mouis, M, Vincent, G and Ashburn, P
(1998)
Investigation of process induced defects in SiGe/Si HBTs by deep level transient spectroscopy.
Journal of Vacuum Science and Technology, B16, .
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Published date: 1998
Organisations:
Nanoelectronics and Nanotechnology
Identifiers
Local EPrints ID: 250919
URI: http://eprints.soton.ac.uk/id/eprint/250919
PURE UUID: 82f1e8f4-e9d4-45cb-916a-4928621a28d1
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Date deposited: 01 Oct 1999
Last modified: 07 Jan 2022 23:54
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Contributors
Author:
A Souifi
Author:
O De Barros
Author:
G Bremond
Author:
B Le Tron
Author:
M Mouis
Author:
G Vincent
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