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Investigation of process induced defects in SiGe/Si HBTs by deep level transient spectroscopy

Investigation of process induced defects in SiGe/Si HBTs by deep level transient spectroscopy
Investigation of process induced defects in SiGe/Si HBTs by deep level transient spectroscopy
1745-1749
Souifi, A
c3333226-fbb8-4dc7-82a7-dd04d1f6a0d9
Barros, O De
5be2d46c-f2d8-43a9-8ca9-6a5fc034d32c
Bremond, G
25de0226-75cf-4769-9383-fbd12d6dac8a
Tron, B Le
8734f911-4acc-4f15-9802-af53da3eb223
Mouis, M
0634257a-7d39-4c77-8b86-9041ee717648
Vincent, G
a4488e86-a932-4ad3-91a5-706e79487a78
Ashburn, P
68cef6b7-205b-47aa-9efb-f1f09f5c1038
Souifi, A
c3333226-fbb8-4dc7-82a7-dd04d1f6a0d9
Barros, O De
5be2d46c-f2d8-43a9-8ca9-6a5fc034d32c
Bremond, G
25de0226-75cf-4769-9383-fbd12d6dac8a
Tron, B Le
8734f911-4acc-4f15-9802-af53da3eb223
Mouis, M
0634257a-7d39-4c77-8b86-9041ee717648
Vincent, G
a4488e86-a932-4ad3-91a5-706e79487a78
Ashburn, P
68cef6b7-205b-47aa-9efb-f1f09f5c1038

Souifi, A, Barros, O De, Bremond, G, Tron, B Le, Mouis, M, Vincent, G and Ashburn, P (1998) Investigation of process induced defects in SiGe/Si HBTs by deep level transient spectroscopy. Journal of Vacuum Science and Technology, B16, 1745-1749.

Record type: Article

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More information

Published date: 1998
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 250919
URI: http://eprints.soton.ac.uk/id/eprint/250919
PURE UUID: 82f1e8f4-e9d4-45cb-916a-4928621a28d1

Catalogue record

Date deposited: 01 Oct 1999
Last modified: 07 Jan 2022 23:54

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Contributors

Author: A Souifi
Author: O De Barros
Author: G Bremond
Author: B Le Tron
Author: M Mouis
Author: G Vincent
Author: P Ashburn

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