Effects of fluorine in silicon solar cells with polysilicon contacts
Effects of fluorine in silicon solar cells with polysilicon contacts
The effects of fluorine on the performance of solar cells with polysilicon contacts at the front surface and at both front and back surfaces are reported. It is shown that a fluorine implant applied to the front surface of the device has two different effects: it improves the passivation of the free oxidised surface leading to improvements in open circuit voltage and short circuit current, and it reduces series resistance. The back polysilicon contact improves the back interface recombination velocity. Specific series resistance values from 0.16 to 0.5 ohm.cm2 have been measured. The effects of the polysilicon contact processing conditions on the short-circuit current, open circuit voltage and spectral response are also discussed.
115-129
Castaner, L
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Silvestri, L
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Carter, J
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Parton, D
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Ashburn, P
68cef6b7-205b-47aa-9efb-f1f09f5c1038
1999
Castaner, L
9f1ec147-4d47-40b8-bd8a-9c2fa88dc6e2
Silvestri, L
c3c1b6d2-a268-44ec-9360-3c4e8924c07a
Carter, J
8ed46261-07b9-4e87-a4fa-9c6ef513b7e9
Parton, D
72b8ce8d-b3c1-4586-9001-63ab27b1a009
Ashburn, P
68cef6b7-205b-47aa-9efb-f1f09f5c1038
Castaner, L, Silvestri, L, Carter, J, Parton, D and Ashburn, P
(1999)
Effects of fluorine in silicon solar cells with polysilicon contacts.
Journal of Solar Energy Materials and Solar Cells, 53, .
Abstract
The effects of fluorine on the performance of solar cells with polysilicon contacts at the front surface and at both front and back surfaces are reported. It is shown that a fluorine implant applied to the front surface of the device has two different effects: it improves the passivation of the free oxidised surface leading to improvements in open circuit voltage and short circuit current, and it reduces series resistance. The back polysilicon contact improves the back interface recombination velocity. Specific series resistance values from 0.16 to 0.5 ohm.cm2 have been measured. The effects of the polysilicon contact processing conditions on the short-circuit current, open circuit voltage and spectral response are also discussed.
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Published date: 1999
Organisations:
Nanoelectronics and Nanotechnology
Identifiers
Local EPrints ID: 250920
URI: http://eprints.soton.ac.uk/id/eprint/250920
PURE UUID: 8d4984c8-6555-4802-915e-ab17285dfb2b
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Date deposited: 02 Apr 2001
Last modified: 10 Dec 2021 20:19
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Contributors
Author:
L Castaner
Author:
L Silvestri
Author:
J Carter
Author:
D Parton
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