The University of Southampton
University of Southampton Institutional Repository

Effects of fluorine in silicon solar cells with polysilicon contacts

Effects of fluorine in silicon solar cells with polysilicon contacts
Effects of fluorine in silicon solar cells with polysilicon contacts
The effects of fluorine on the performance of solar cells with polysilicon contacts at the front surface and at both front and back surfaces are reported. It is shown that a fluorine implant applied to the front surface of the device has two different effects: it improves the passivation of the free oxidised surface leading to improvements in open circuit voltage and short circuit current, and it reduces series resistance. The back polysilicon contact improves the back interface recombination velocity. Specific series resistance values from 0.16 to 0.5 ohm.cm2 have been measured. The effects of the polysilicon contact processing conditions on the short-circuit current, open circuit voltage and spectral response are also discussed.
115-129
Castaner, L
9f1ec147-4d47-40b8-bd8a-9c2fa88dc6e2
Silvestri, L
c3c1b6d2-a268-44ec-9360-3c4e8924c07a
Carter, J
8ed46261-07b9-4e87-a4fa-9c6ef513b7e9
Parton, D
72b8ce8d-b3c1-4586-9001-63ab27b1a009
Ashburn, P
68cef6b7-205b-47aa-9efb-f1f09f5c1038
Castaner, L
9f1ec147-4d47-40b8-bd8a-9c2fa88dc6e2
Silvestri, L
c3c1b6d2-a268-44ec-9360-3c4e8924c07a
Carter, J
8ed46261-07b9-4e87-a4fa-9c6ef513b7e9
Parton, D
72b8ce8d-b3c1-4586-9001-63ab27b1a009
Ashburn, P
68cef6b7-205b-47aa-9efb-f1f09f5c1038

Castaner, L, Silvestri, L, Carter, J, Parton, D and Ashburn, P (1999) Effects of fluorine in silicon solar cells with polysilicon contacts Journal of Solar Energy Materials and Solar Cells, 53, pp. 115-129.

Record type: Article

Abstract

The effects of fluorine on the performance of solar cells with polysilicon contacts at the front surface and at both front and back surfaces are reported. It is shown that a fluorine implant applied to the front surface of the device has two different effects: it improves the passivation of the free oxidised surface leading to improvements in open circuit voltage and short circuit current, and it reduces series resistance. The back polysilicon contact improves the back interface recombination velocity. Specific series resistance values from 0.16 to 0.5 ohm.cm2 have been measured. The effects of the polysilicon contact processing conditions on the short-circuit current, open circuit voltage and spectral response are also discussed.

Full text not available from this repository.

More information

Published date: 1999
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 250920
URI: http://eprints.soton.ac.uk/id/eprint/250920
PURE UUID: 8d4984c8-6555-4802-915e-ab17285dfb2b

Catalogue record

Date deposited: 02 Apr 2001
Last modified: 18 Jul 2017 10:13

Export record

Contributors

Author: L Castaner
Author: L Silvestri
Author: J Carter
Author: D Parton
Author: P Ashburn

University divisions

Download statistics

Downloads from ePrints over the past year. Other digital versions may also be available to download e.g. from the publisher's website.

View more statistics

Atom RSS 1.0 RSS 2.0

Contact ePrints Soton: eprints@soton.ac.uk

ePrints Soton supports OAI 2.0 with a base URL of http://eprints.soton.ac.uk/cgi/oai2

This repository has been built using EPrints software, developed at the University of Southampton, but available to everyone to use.

We use cookies to ensure that we give you the best experience on our website. If you continue without changing your settings, we will assume that you are happy to receive cookies on the University of Southampton website.

×