Electrical determination of bandgap narrowing and parasitic energy barriers in SiGe and SiGeC heterojunction bipolar transistors


Anteney, I, Lippert, G, Ashburn, P, Osten, H J and Parker, G J (1997) Electrical determination of bandgap narrowing and parasitic energy barriers in SiGe and SiGeC heterojunction bipolar transistors At Proceedings of 5th IEEE Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications. , pp. 55-60.

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Item Type: Conference or Workshop Item (Other)
Venue - Dates: Proceedings of 5th IEEE Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications, 1997-01-01
Organisations: Nanoelectronics and Nanotechnology
ePrint ID: 250922
Date :
Date Event
1997Published
Date Deposited: 01 Oct 1999
Last Modified: 17 Apr 2017 23:47
Further Information:Google Scholar
URI: http://eprints.soton.ac.uk/id/eprint/250922

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