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Electrical determination of bandgap narrowing and parasitic energy barriers in SiGe and SiGeC heterojunction bipolar transistors

Record type: Conference or Workshop Item (Other)

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Citation

Anteney, I, Lippert, G, Ashburn, P, Osten, H J and Parker, G J (1997) Electrical determination of bandgap narrowing and parasitic energy barriers in SiGe and SiGeC heterojunction bipolar transistors At Proceedings of 5th IEEE Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications. , pp. 55-60.

More information

Published date: 1997
Venue - Dates: Proceedings of 5th IEEE Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications, 1997-01-01
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 250922
URI: http://eprints.soton.ac.uk/id/eprint/250922
ISBN: 0-7803-4135-X
PURE UUID: 8bbc75f3-6cd2-4261-81c4-9d3efe1d3dc9

Catalogue record

Date deposited: 01 Oct 1999
Last modified: 18 Jul 2017 10:13

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Contributors

Author: I Anteney
Author: G Lippert
Author: P Ashburn
Author: H J Osten
Author: G J Parker

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