Electrical determination of bandgap narrowing and parasitic energy barriers in SiGe and SiGeC heterojunction bipolar transistors
Electrical determination of bandgap narrowing and parasitic energy barriers in SiGe and SiGeC heterojunction bipolar transistors
0-7803-4135-X
55-60
Anteney, I
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Lippert, G
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Ashburn, P
68cef6b7-205b-47aa-9efb-f1f09f5c1038
Osten, H J
76c037ac-a7f9-44d8-8532-4e2f20412eec
Parker, G J
b140c5a5-94c4-44f3-95a3-c5054a9fe38d
1997
Anteney, I
0ffac842-7f39-4ffc-9b13-315b44aac8e6
Lippert, G
36d2a828-ece8-4da5-92fe-4de32542a56d
Ashburn, P
68cef6b7-205b-47aa-9efb-f1f09f5c1038
Osten, H J
76c037ac-a7f9-44d8-8532-4e2f20412eec
Parker, G J
b140c5a5-94c4-44f3-95a3-c5054a9fe38d
Anteney, I, Lippert, G, Ashburn, P, Osten, H J and Parker, G J
(1997)
Electrical determination of bandgap narrowing and parasitic energy barriers in SiGe and SiGeC heterojunction bipolar transistors.
Proceedings of 5th IEEE Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications.
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Published date: 1997
Venue - Dates:
Proceedings of 5th IEEE Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications, 1997-01-01
Organisations:
Nanoelectronics and Nanotechnology
Identifiers
Local EPrints ID: 250922
URI: http://eprints.soton.ac.uk/id/eprint/250922
ISBN: 0-7803-4135-X
PURE UUID: 8bbc75f3-6cd2-4261-81c4-9d3efe1d3dc9
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Date deposited: 01 Oct 1999
Last modified: 07 Jan 2022 23:54
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Contributors
Author:
I Anteney
Author:
G Lippert
Author:
H J Osten
Author:
G J Parker
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