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Electrical determination of bandgap narrowing and parasitic energy barriers in SiGe and SiGeC heterojunction bipolar transistors

Electrical determination of bandgap narrowing and parasitic energy barriers in SiGe and SiGeC heterojunction bipolar transistors
Electrical determination of bandgap narrowing and parasitic energy barriers in SiGe and SiGeC heterojunction bipolar transistors
0-7803-4135-X
55-60
Anteney, I
0ffac842-7f39-4ffc-9b13-315b44aac8e6
Lippert, G
36d2a828-ece8-4da5-92fe-4de32542a56d
Ashburn, P
68cef6b7-205b-47aa-9efb-f1f09f5c1038
Osten, H J
76c037ac-a7f9-44d8-8532-4e2f20412eec
Parker, G J
b140c5a5-94c4-44f3-95a3-c5054a9fe38d
Anteney, I
0ffac842-7f39-4ffc-9b13-315b44aac8e6
Lippert, G
36d2a828-ece8-4da5-92fe-4de32542a56d
Ashburn, P
68cef6b7-205b-47aa-9efb-f1f09f5c1038
Osten, H J
76c037ac-a7f9-44d8-8532-4e2f20412eec
Parker, G J
b140c5a5-94c4-44f3-95a3-c5054a9fe38d

Anteney, I, Lippert, G, Ashburn, P, Osten, H J and Parker, G J (1997) Electrical determination of bandgap narrowing and parasitic energy barriers in SiGe and SiGeC heterojunction bipolar transistors. Proceedings of 5th IEEE Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications. pp. 55-60 .

Record type: Conference or Workshop Item (Other)

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Published date: 1997
Venue - Dates: Proceedings of 5th IEEE Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications, 1997-01-01
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 250922
URI: https://eprints.soton.ac.uk/id/eprint/250922
ISBN: 0-7803-4135-X
PURE UUID: 8bbc75f3-6cd2-4261-81c4-9d3efe1d3dc9

Catalogue record

Date deposited: 01 Oct 1999
Last modified: 16 Jul 2019 23:10

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Contributors

Author: I Anteney
Author: G Lippert
Author: P Ashburn
Author: H J Osten
Author: G J Parker

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