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A novel self-aligned SiGe HBT structure using selective and non-selective epitaxy

Record type: Conference or Workshop Item (Other)

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Citation

Schiz, J, Bonar, J M and Ashburn, P (1997) A novel self-aligned SiGe HBT structure using selective and non-selective epitaxy At Proceedings of 5th IEEE Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications. , pp. 255-260.

More information

Published date: 1997
Venue - Dates: Proceedings of 5th IEEE Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications, 1997-01-01
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 250924
URI: http://eprints.soton.ac.uk/id/eprint/250924
ISBN: 0-7803-4135-X
PURE UUID: 6f66b7aa-e924-4c96-8542-4406b523e11d

Catalogue record

Date deposited: 01 Oct 1999
Last modified: 18 Jul 2017 10:13

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Contributors

Author: J Schiz
Author: J M Bonar
Author: P Ashburn

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