A novel self-aligned SiGe HBT structure using selective and non-selective epitaxy


Schiz, J, Bonar, J M and Ashburn, P (1997) A novel self-aligned SiGe HBT structure using selective and non-selective epitaxy At Proceedings of 5th IEEE Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications. , pp. 255-260.

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Item Type: Conference or Workshop Item (Other)
Venue - Dates: Proceedings of 5th IEEE Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications, 1997-01-01
Organisations: Nanoelectronics and Nanotechnology
ePrint ID: 250924
Date :
Date Event
1997Published
Date Deposited: 01 Oct 1999
Last Modified: 17 Apr 2017 23:47
Further Information:Google Scholar
URI: http://eprints.soton.ac.uk/id/eprint/250924

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