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The design and characterisation of a SiGe I2L technology

Record type: Conference or Workshop Item (Other)

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Citation

Moiseiwitsch, N E, Kennedy, G P, Wainwright, S, Ashburn, P and Hall, S (1997) The design and characterisation of a SiGe I2L technology At Proceedings of European Solid State Device Research Conference. , pp. 348-351.

More information

Published date: 1997
Venue - Dates: Proceedings of European Solid State Device Research Conference, 1997-01-01
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 250925
URI: http://eprints.soton.ac.uk/id/eprint/250925
ISBN: 2-86332-221-4
PURE UUID: 9dc96384-52b4-438b-ad74-371c628d61ca

Catalogue record

Date deposited: 01 Oct 1999
Last modified: 18 Jul 2017 10:13

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Contributors

Author: N E Moiseiwitsch
Author: G P Kennedy
Author: S Wainwright
Author: P Ashburn
Author: S Hall

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