The design and characterisation of a SiGe I2L technology


Moiseiwitsch, N E, Kennedy, G P, Wainwright, S, Ashburn, P and Hall, S (1997) The design and characterisation of a SiGe I2L technology At Proceedings of European Solid State Device Research Conference. , pp. 348-351.

Download

Full text not available from this repository.

Item Type: Conference or Workshop Item (Other)
Venue - Dates: Proceedings of European Solid State Device Research Conference, 1997-01-01
Organisations: Nanoelectronics and Nanotechnology
ePrint ID: 250925
Date :
Date Event
1997Published
Date Deposited: 01 Oct 1999
Last Modified: 17 Apr 2017 23:47
Further Information:Google Scholar
URI: http://eprints.soton.ac.uk/id/eprint/250925

Actions (login required)

View Item View Item