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The design and characterisation of a SiGe I2L technology

The design and characterisation of a SiGe I2L technology
The design and characterisation of a SiGe I2L technology
2-86332-221-4
348-351
Moiseiwitsch, N E
3cca82f7-300c-4ef9-9298-f68d784d3735
Kennedy, G P
7ee93f16-26f5-403e-9574-d22c48b69810
Wainwright, S
21105e4e-0fe7-4643-a033-f66e17664236
Ashburn, P
68cef6b7-205b-47aa-9efb-f1f09f5c1038
Hall, S
f4a3297d-bb12-404d-9a02-f082ba4cbfb0
Moiseiwitsch, N E
3cca82f7-300c-4ef9-9298-f68d784d3735
Kennedy, G P
7ee93f16-26f5-403e-9574-d22c48b69810
Wainwright, S
21105e4e-0fe7-4643-a033-f66e17664236
Ashburn, P
68cef6b7-205b-47aa-9efb-f1f09f5c1038
Hall, S
f4a3297d-bb12-404d-9a02-f082ba4cbfb0

Moiseiwitsch, N E, Kennedy, G P, Wainwright, S, Ashburn, P and Hall, S (1997) The design and characterisation of a SiGe I2L technology. Proceedings of European Solid State Device Research Conference. pp. 348-351 .

Record type: Conference or Workshop Item (Other)

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More information

Published date: 1997
Venue - Dates: Proceedings of European Solid State Device Research Conference, 1997-01-01
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 250925
URI: http://eprints.soton.ac.uk/id/eprint/250925
ISBN: 2-86332-221-4
PURE UUID: 9dc96384-52b4-438b-ad74-371c628d61ca

Catalogue record

Date deposited: 01 Oct 1999
Last modified: 08 Jan 2022 14:41

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Contributors

Author: N E Moiseiwitsch
Author: G P Kennedy
Author: S Wainwright
Author: P Ashburn
Author: S Hall

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