Hashim, M D R, Lever, R F and Ashburn, P (1997) Characterisation of the effects of transient enhanced diffusion in SiGe HBTs by a comparison of measured and 2D simulated device characteristics. Proceedings of IEEE Bipolar/BiCMOS Circuits and Technology Meeting. pp. 96-99 .
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Published date: 1997
Venue - Dates:
Proceedings of IEEE Bipolar/BiCMOS Circuits and Technology Meeting, 1997-01-01
Organisations:
Nanoelectronics and Nanotechnology
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Local EPrints ID: 250926
URI: http://eprints.soton.ac.uk/id/eprint/250926
ISBN: 0-7803-3916-9
PURE UUID: 6b8f7dac-53a7-4e03-b621-1f532ab70940
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Date deposited: 01 Oct 1999
Last modified: 10 Dec 2021 20:19
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