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Characterisation of the effects of transient enhanced diffusion in SiGe HBTs by a comparison of measured and 2D simulated device characteristics

Record type: Conference or Workshop Item (Other)

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Citation

Hashim, M D R, Lever, R F and Ashburn, P (1997) Characterisation of the effects of transient enhanced diffusion in SiGe HBTs by a comparison of measured and 2D simulated device characteristics At Proceedings of IEEE Bipolar/BiCMOS Circuits and Technology Meeting. , pp. 96-99.

More information

Published date: 1997
Venue - Dates: Proceedings of IEEE Bipolar/BiCMOS Circuits and Technology Meeting, 1997-01-01
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 250926
URI: http://eprints.soton.ac.uk/id/eprint/250926
ISBN: 0-7803-3916-9
PURE UUID: 6b8f7dac-53a7-4e03-b621-1f532ab70940

Catalogue record

Date deposited: 01 Oct 1999
Last modified: 18 Jul 2017 10:13

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Contributors

Author: M D R Hashim
Author: R F Lever
Author: P Ashburn

University divisions


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