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Improved epitaxial quality following etch damage removal on plasma etched silicon surfaces

Improved epitaxial quality following etch damage removal on plasma etched silicon surfaces
Improved epitaxial quality following etch damage removal on plasma etched silicon surfaces
0-7503-0464-2
407-410
Bonar, J M
5ee6b25a-3e67-4a6d-9854-5e1e079d50b8
Schiz, J
d29b4f9e-f87d-445a-962b-db8de79f45a1
Ashburn, P
68cef6b7-205b-47aa-9efb-f1f09f5c1038
Bonar, J M
5ee6b25a-3e67-4a6d-9854-5e1e079d50b8
Schiz, J
d29b4f9e-f87d-445a-962b-db8de79f45a1
Ashburn, P
68cef6b7-205b-47aa-9efb-f1f09f5c1038

Bonar, J M, Schiz, J and Ashburn, P (1997) Improved epitaxial quality following etch damage removal on plasma etched silicon surfaces. Proceedings of Microscopy of Semiconducting Materials Conference. pp. 407-410 .

Record type: Conference or Workshop Item (Other)

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More information

Published date: 1997
Venue - Dates: Proceedings of Microscopy of Semiconducting Materials Conference, 1997-01-01
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 250927
URI: http://eprints.soton.ac.uk/id/eprint/250927
ISBN: 0-7503-0464-2
PURE UUID: 6308fcd1-1cb9-4480-9e97-49a93d7aa096

Catalogue record

Date deposited: 01 Oct 1999
Last modified: 10 Dec 2021 20:19

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Contributors

Author: J M Bonar
Author: J Schiz
Author: P Ashburn

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