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LPCVD epitaxy of Si and SiGe and incorporation of these materials in advanced bipolar devices

Record type: Conference or Workshop Item (Other)

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Citation

Parker, G J, Ashburn, P and Bonar, J M (1997) LPCVD epitaxy of Si and SiGe and incorporation of these materials in advanced bipolar devices At Proceedings of 7th International Symposium on Silicon Molecular Beam Epitaxy. , pp. 123-124.

More information

Published date: 1997
Venue - Dates: Proceedings of 7th International Symposium on Silicon Molecular Beam Epitaxy, 1997-01-01
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 250928
URI: http://eprints.soton.ac.uk/id/eprint/250928
PURE UUID: 05507a22-993c-4ee1-8222-c6ef7f97ec09

Catalogue record

Date deposited: 01 Oct 1999
Last modified: 18 Jul 2017 10:13

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Contributors

Author: G J Parker
Author: P Ashburn
Author: J M Bonar

University divisions


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