Moiseiwitsch, N E, Schiz, J F W, Marsh, C D, Ashburn, P and Booker, G R (1996) Increased current gain and reduced emitter resistance in F-implanted low thermal budget polysilicon emitters for SiGe HBTs. pp. 177-180 .
Record type:
Conference or Workshop Item
(Other)
This record has no associated files available for download.
More information
Published date: 1996
Organisations:
Nanoelectronics and Nanotechnology
Identifiers
Local EPrints ID: 250931
URI: http://eprints.soton.ac.uk/id/eprint/250931
PURE UUID: e00269ed-2457-4d0f-8d73-09b87a413005
Catalogue record
Date deposited: 08 Nov 1999
Last modified: 07 Jan 2022 23:53
Export record
Contributors
Author:
N E Moiseiwitsch
Author:
J F W Schiz
Author:
C D Marsh
Author:
P Ashburn
Author:
G R Booker
Download statistics
Downloads from ePrints over the past year. Other digital versions may also be available to download e.g. from the publisher's website.