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Increased current gain and reduced emitter resistance in F-implanted low thermal budget polysilicon emitters for SiGe HBTs

Increased current gain and reduced emitter resistance in F-implanted low thermal budget polysilicon emitters for SiGe HBTs
Increased current gain and reduced emitter resistance in F-implanted low thermal budget polysilicon emitters for SiGe HBTs
177-180
Moiseiwitsch, N E
3cca82f7-300c-4ef9-9298-f68d784d3735
Schiz, J F W
6623181e-1e06-4e22-9bf3-5db9c17920bd
Marsh, C D
b5482357-2e75-49f8-8217-72e1fde37c9f
Ashburn, P
68cef6b7-205b-47aa-9efb-f1f09f5c1038
Booker, G R
1c5cd067-0dc6-4cd7-9e2c-9adf8ae291e9
Moiseiwitsch, N E
3cca82f7-300c-4ef9-9298-f68d784d3735
Schiz, J F W
6623181e-1e06-4e22-9bf3-5db9c17920bd
Marsh, C D
b5482357-2e75-49f8-8217-72e1fde37c9f
Ashburn, P
68cef6b7-205b-47aa-9efb-f1f09f5c1038
Booker, G R
1c5cd067-0dc6-4cd7-9e2c-9adf8ae291e9

Moiseiwitsch, N E, Schiz, J F W, Marsh, C D, Ashburn, P and Booker, G R (1996) Increased current gain and reduced emitter resistance in F-implanted low thermal budget polysilicon emitters for SiGe HBTs. pp. 177-180 .

Record type: Conference or Workshop Item (Other)

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Published date: 1996
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 250931
URI: https://eprints.soton.ac.uk/id/eprint/250931
PURE UUID: e00269ed-2457-4d0f-8d73-09b87a413005

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Date deposited: 08 Nov 1999
Last modified: 16 Jul 2019 23:09

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