Effect of transistor geometry on the electrical characteristics of Si1-xGex heterojunction bipolar transistors at low temperatures
Effect of transistor geometry on the electrical characteristics of Si1-xGex heterojunction bipolar transistors at low temperatures
This paper investigates the effect of using an extrinsic implant on the behaviour of SiGe HBTs at low temperatures. The collector current characteristics of SiGe HBTs with different geometries are measured at temperatures from 77 to 300K. The temperature dependence of the collector current is different for devices with different geometries and this results from base profile broadening in the vicinity of the extrinsic base implant due to point defects. Process and device simulators are used to explain this effect. A method for eliminating this geometry dependence of the collector current is also described.
C3-119-C3-124
Hashim, M.D.R.
dc30dac8-eef1-44c7-a3af-5b01a27e61ea
Lever, R.F.
c9194e6d-c30f-41c6-b6c5-7bdc597acdf9
Ashburn, P.
68cef6b7-205b-47aa-9efb-f1f09f5c1038
Parker, G.J.
b140c5a5-94c4-44f3-95a3-c5054a9fe38d
April 1996
Hashim, M.D.R.
dc30dac8-eef1-44c7-a3af-5b01a27e61ea
Lever, R.F.
c9194e6d-c30f-41c6-b6c5-7bdc597acdf9
Ashburn, P.
68cef6b7-205b-47aa-9efb-f1f09f5c1038
Parker, G.J.
b140c5a5-94c4-44f3-95a3-c5054a9fe38d
Hashim, M.D.R., Lever, R.F., Ashburn, P. and Parker, G.J.
(1996)
Effect of transistor geometry on the electrical characteristics of Si1-xGex heterojunction bipolar transistors at low temperatures.
Second European Workshop on Low Temperature Electronics: WOLTE 2, , Leuven, Belgium.
26 - 28 Jun 1996.
.
(doi:10.1051/jp4:1996318).
Record type:
Conference or Workshop Item
(Other)
Abstract
This paper investigates the effect of using an extrinsic implant on the behaviour of SiGe HBTs at low temperatures. The collector current characteristics of SiGe HBTs with different geometries are measured at temperatures from 77 to 300K. The temperature dependence of the collector current is different for devices with different geometries and this results from base profile broadening in the vicinity of the extrinsic base implant due to point defects. Process and device simulators are used to explain this effect. A method for eliminating this geometry dependence of the collector current is also described.
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Published date: April 1996
Additional Information:
J. Phys. IV, France, Volume 06, Number C3, Avril 1996
WOLTE 2: Proceedings of the Second European Workshop on Low Temperature Electronics
Venue - Dates:
Second European Workshop on Low Temperature Electronics: WOLTE 2, , Leuven, Belgium, 1996-06-26 - 1996-06-28
Organisations:
Nanoelectronics and Nanotechnology
Identifiers
Local EPrints ID: 250932
URI: http://eprints.soton.ac.uk/id/eprint/250932
PURE UUID: a6b939c5-1c61-4488-8e75-d54607018f99
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Date deposited: 01 Oct 1999
Last modified: 14 Mar 2024 05:06
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Author:
M.D.R. Hashim
Author:
R.F. Lever
Author:
G.J. Parker
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