Effect of transistor geometry on the electrical characteristics of SiGe heterojunction bipolar transistors at low temperatures


Hashim, M D R, Lever, R F, Ashburn, P and Parker, G J (1996) Effect of transistor geometry on the electrical characteristics of SiGe heterojunction bipolar transistors at low temperatures , pp. 119-124.

Download

Full text not available from this repository.

Item Type: Conference or Workshop Item (Other)
Organisations: Nanoelectronics and Nanotechnology
ePrint ID: 250932
Date :
Date Event
1996Published
Date Deposited: 01 Oct 1999
Last Modified: 17 Apr 2017 23:46
Further Information:Google Scholar
URI: http://eprints.soton.ac.uk/id/eprint/250932

Actions (login required)

View Item View Item