The University of Southampton
University of Southampton Institutional Repository

Effect of transistor geometry on the electrical characteristics of SiGe heterojunction bipolar transistors at low temperatures

Record type: Conference or Workshop Item (Other)

Full text not available from this repository.

Citation

Hashim, M D R, Lever, R F, Ashburn, P and Parker, G J (1996) Effect of transistor geometry on the electrical characteristics of SiGe heterojunction bipolar transistors at low temperatures , pp. 119-124.

More information

Published date: 1996
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 250932
URI: http://eprints.soton.ac.uk/id/eprint/250932
PURE UUID: a6b939c5-1c61-4488-8e75-d54607018f99

Catalogue record

Date deposited: 01 Oct 1999
Last modified: 18 Jul 2017 10:13

Export record

Contributors

Author: M D R Hashim
Author: R F Lever
Author: P Ashburn
Author: G J Parker

University divisions

Download statistics

Downloads from ePrints over the past year. Other digital versions may also be available to download e.g. from the publisher's website.

View more statistics

Atom RSS 1.0 RSS 2.0

Contact ePrints Soton: eprints@soton.ac.uk

ePrints Soton supports OAI 2.0 with a base URL of http://eprints.soton.ac.uk/cgi/oai2

This repository has been built using EPrints software, developed at the University of Southampton, but available to everyone to use.

We use cookies to ensure that we give you the best experience on our website. If you continue without changing your settings, we will assume that you are happy to receive cookies on the University of Southampton website.

×