Temperature dependence of the collector current of bipolar transistors with epitaxial and ion implanted bases
Temperature dependence of the collector current of bipolar transistors with epitaxial and ion implanted bases
774-783
Ashburn, P
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Boussetta, H
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Hashim, M D R
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Chantre, A
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Mouis, M
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Vincent, G
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Parker, G J
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1996
Ashburn, P
68cef6b7-205b-47aa-9efb-f1f09f5c1038
Boussetta, H
541c4991-d5b3-4613-b1f8-0418067007f3
Hashim, M D R
dc30dac8-eef1-44c7-a3af-5b01a27e61ea
Chantre, A
0535d54c-1aa6-484f-af55-4f412aab911b
Mouis, M
0634257a-7d39-4c77-8b86-9041ee717648
Vincent, G
a4488e86-a932-4ad3-91a5-706e79487a78
Parker, G J
b140c5a5-94c4-44f3-95a3-c5054a9fe38d
Ashburn, P, Boussetta, H, Hashim, M D R, Chantre, A, Mouis, M, Vincent, G and Parker, G J
(1996)
Temperature dependence of the collector current of bipolar transistors with epitaxial and ion implanted bases.
IEEE Transactions on Electron Devices, 43, .
Text
1996_Ashburn_BGN.pdf
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Published date: 1996
Organisations:
Nanoelectronics and Nanotechnology
Identifiers
Local EPrints ID: 250933
URI: http://eprints.soton.ac.uk/id/eprint/250933
PURE UUID: 3923d684-eeb4-4d94-b0cf-d79add73fe15
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Date deposited: 06 Jan 2004
Last modified: 14 Mar 2024 05:06
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Contributors
Author:
H Boussetta
Author:
M D R Hashim
Author:
A Chantre
Author:
M Mouis
Author:
G Vincent
Author:
G J Parker
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