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Temperature dependence of the collector current of bipolar transistors with epitaxial and ion implanted bases

Record type: Article
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Citation

Ashburn, P, Boussetta, H, Hashim, M D R, Chantre, A, Mouis, M, Vincent, G and Parker, G J (1996) Temperature dependence of the collector current of bipolar transistors with epitaxial and ion implanted bases IEEE Transactions on Electron Devices, 43, pp. 774-783.

More information

Published date: 1996
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 250933
URI: http://eprints.soton.ac.uk/id/eprint/250933
PURE UUID: 3923d684-eeb4-4d94-b0cf-d79add73fe15

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Date deposited: 06 Jan 2004
Last modified: 18 Jul 2017 10:13

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Contributors

Author: P Ashburn
Author: H Boussetta
Author: M D R Hashim
Author: A Chantre
Author: M Mouis
Author: G Vincent
Author: G J Parker

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